Impact of quantum capacitance on intrinsic inversion capacitance characteristics and inversion-charge loss for multigate III-V-on-Insulator nMOSFETs

Hsin Hung Shen; Shih Lun Shen; Chang Hung Yu; Pin Su

doi:10.1109/TED.2015.2500915

Impact of quantum capacitance on intrinsic inversion capacitance characteristics and inversion-charge loss for multigate III-V-on-Insulator nMOSFETs

Hsin Hung Shen, Shih Lun Shen, Chang Hung Yu, Pin Su

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This paper investigates the impact of quantum capacitance on the intrinsic inversion-capacitance (C_inv) characteristics of high-mobility multigate III-V-on-insulator nMOSFETs through a numerical simulation corroborated by the theoretical calculation. Nonmonotonic C_inv characteristics stemming from the energy dependence of 1-D density-of-states and significant C_inv degradation due to quantum capacitance have been found in trigate In_0.53Ga_0.47As and InAs devices based on the ITRS 2018-2024 technology nodes. This paper indicates that, to compensate the excess inversion-charge (Q_inv) loss due to quantum capacitance, the needed mobility gain of the trigate InGaAs and InAs devices (against the Si counterparts) should be at least ∼3× and ∼4×, respectively. This paper also suggests that the quantum-capacitance-induced Q_inv loss can be mitigated by raising the fin aspect ratio of the III-V multigate device.

Original language	English
Article number	7349194
Pages (from-to)	339-344
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	1
DOIs	https://doi.org/10.1109/TED.2015.2500915
State	Published - 1 Jan 2016

Keywords

III-V MOSFET
Multigate MOSFET
Quantum capacitance

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title = "Impact of quantum capacitance on intrinsic inversion capacitance characteristics and inversion-charge loss for multigate III-V-on-Insulator nMOSFETs",

abstract = "This paper investigates the impact of quantum capacitance on the intrinsic inversion-capacitance (Cinv) characteristics of high-mobility multigate III-V-on-insulator nMOSFETs through a numerical simulation corroborated by the theoretical calculation. Nonmonotonic Cinv characteristics stemming from the energy dependence of 1-D density-of-states and significant Cinv degradation due to quantum capacitance have been found in trigate In0.53Ga0.47As and InAs devices based on the ITRS 2018-2024 technology nodes. This paper indicates that, to compensate the excess inversion-charge (Qinv) loss due to quantum capacitance, the needed mobility gain of the trigate InGaAs and InAs devices (against the Si counterparts) should be at least ∼3× and ∼4×, respectively. This paper also suggests that the quantum-capacitance-induced Qinv loss can be mitigated by raising the fin aspect ratio of the III-V multigate device.",

keywords = "III-V MOSFET, Multigate MOSFET, Quantum capacitance",

author = "Shen, {Hsin Hung} and Shen, {Shih Lun} and Yu, {Chang Hung} and Pin Su",

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doi = "10.1109/TED.2015.2500915",

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AU - Shen, Hsin Hung

AU - Shen, Shih Lun

AU - Yu, Chang Hung

AU - Su, Pin

PY - 2016/1/1

Y1 - 2016/1/1

N2 - This paper investigates the impact of quantum capacitance on the intrinsic inversion-capacitance (Cinv) characteristics of high-mobility multigate III-V-on-insulator nMOSFETs through a numerical simulation corroborated by the theoretical calculation. Nonmonotonic Cinv characteristics stemming from the energy dependence of 1-D density-of-states and significant Cinv degradation due to quantum capacitance have been found in trigate In0.53Ga0.47As and InAs devices based on the ITRS 2018-2024 technology nodes. This paper indicates that, to compensate the excess inversion-charge (Qinv) loss due to quantum capacitance, the needed mobility gain of the trigate InGaAs and InAs devices (against the Si counterparts) should be at least ∼3× and ∼4×, respectively. This paper also suggests that the quantum-capacitance-induced Qinv loss can be mitigated by raising the fin aspect ratio of the III-V multigate device.

AB - This paper investigates the impact of quantum capacitance on the intrinsic inversion-capacitance (Cinv) characteristics of high-mobility multigate III-V-on-insulator nMOSFETs through a numerical simulation corroborated by the theoretical calculation. Nonmonotonic Cinv characteristics stemming from the energy dependence of 1-D density-of-states and significant Cinv degradation due to quantum capacitance have been found in trigate In0.53Ga0.47As and InAs devices based on the ITRS 2018-2024 technology nodes. This paper indicates that, to compensate the excess inversion-charge (Qinv) loss due to quantum capacitance, the needed mobility gain of the trigate InGaAs and InAs devices (against the Si counterparts) should be at least ∼3× and ∼4×, respectively. This paper also suggests that the quantum-capacitance-induced Qinv loss can be mitigated by raising the fin aspect ratio of the III-V multigate device.

KW - III-V MOSFET

KW - Multigate MOSFET

KW - Quantum capacitance

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ER -

Impact of quantum capacitance on intrinsic inversion capacitance characteristics and inversion-charge loss for multigate III-V-on-Insulator nMOSFETs

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