Impact of post-deposition-annealing on the electrical characteristics of HfO x N y gate dielectric on Ge substrate

Chao Ching Cheng*, Chao-Hsin Chien, Ching Wei Chen, Shih Lu Hsu, Ming Yi Yang, Chien Chao Huang, Fu Liang Yang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

15 Scopus citations

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Material Science