We systematically investigated the effect of post-deposition-annealing (PDA) on the electrical characteristics of Ge MOS capacitors with hafnium-oxynitride gate dielectric. The higher PDA temperature and longer PDA time was found to obtain the lower equivalent oxide thickness (EOT) of HfO x N y /Ge gate stack, however, with a larger hysteresis width. A lower EOT of 19.5 Å with a low leakage current of 1.8 × 10 -5 A/cm 2 at V G = -1V was achieved after 600 °C annealing for 5 min. The improved capacitor properties after the PDA may be closely related to the different compositions and thicknesses of the resultant interfacial layers.
|Number of pages||4|
|State||Published - 17 Jun 2005|
|Event||14th Biennial Conference on Insulating Films on Semiconductors - |
Duration: 22 Jun 2005 → 24 Jun 2005
- HfO N
- High-k gate dielectric