Impact of post deposition annealing on resistive switching in Ga₂O₃-based conductive-bridge RAM devices

Keyphrases

• Post-deposition Annealing 100%
• Ga2O3 100%
• Resistive Switching 100%
• Conductive Bridging Random Access Memory (CBRAM) 100%
• Annealing 66%
• Electrical Properties 33%
• Room Temperature 33%
• Deposited Film 33%
• Memory Window 33%
• Memory Device 33%
• Device Performance 33%
• Pure Nitrogen 33%
• Annealing Process 33%
• Cu(II) Ions 33%
• RF Sputtering 33%
• Switching Cycle 33%
• Gas Atmosphere 33%
• Role of Temperature 33%
• β-Ga2O3 Thin Film 33%
• High Switching 33%
• Amorphous Gallium Oxide 33%

Engineering

• Conductive 100%
• Resistive 100%
• Reliability Availability and Maintainability (Reliability Engineering) 100%
• Thin Films 33%
• Deposited Film 33%
• Annealing Process 33%
• Room Temperature 33%
• Device Performance 33%

Material Science

• Annealing 100%
• Thin Films 50%
• Film 50%
• Oxide Compound 50%
• Gallium 50%
• Copper Ion 50%