We study the influence of post-deposition annealing on the electrical properties of performance of Ga2O3-based Cu-ion-based conductive-bridge RAM (CBRAM) devices. Amorphous gallium oxide (Ga2O3) thin films were fabricated by RF sputtering at room temperature. The deposited films were annealed from the different temperatures and gas ambient. Their resistive switching characteristics are compared to determine the role of temperature and atmosphere in the annealing process on performance of these memory devices. The substantial improvement in device performance, such as stable switching, high switching cycles, and increased memory window, were obtained in the CBRAM devices during the post- Ga2O3 deposition annealing in pure nitrogen (N2) ambient.