Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

Chih Chieh Hsu; Po Tsun Liu; Kai Jhih Gan; Dun Bao Ruan; Yu Chuan Chiu; Simon M. Sze

doi:10.1016/j.surfcoat.2021.127539

Impact of O₂ plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

Chih Chieh Hsu, Po Tsun Liu^*, Kai Jhih Gan, Dun Bao Ruan, Yu Chuan Chiu, Simon M. Sze

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The impact of O₂ plasma treatment on novel amorphous oxide InWZnO (IWZO) as conductive bridge random access memory (CBRAM) was investigated. A high-quality film on the surface of IWZO can be obtained by using remote O₂ plasma treatment. The uniformity of O₂ plasma sample is better than control sample, and also the set and reset voltage are more uniform and smaller to suitable for memory operation. Moreover, the O₂ plasma sample shows excellent memory performance, such as high switching endurance cycles (up to 3 × 10³), long retention time for 10⁴ s at 85 °C. These results show that the surface modification with O₂ plasma on IWZO CBRAM device is a critical technique for next generation memory applications.

Original language	English
Article number	127539
Journal	Surface and Coatings Technology
Volume	422
DOIs	https://doi.org/10.1016/j.surfcoat.2021.127539
State	Published - 25 Sep 2021

Keywords

Conductive-bridge RAM (CBRAM)
Indium-tungsten-zinc oxide (IWZO)
Oxygen-rich oxide
Remote oxygen plasma
Surface modification

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10.1016/j.surfcoat.2021.127539

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title = "Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory",

abstract = "The impact of O2 plasma treatment on novel amorphous oxide InWZnO (IWZO) as conductive bridge random access memory (CBRAM) was investigated. A high-quality film on the surface of IWZO can be obtained by using remote O2 plasma treatment. The uniformity of O2 plasma sample is better than control sample, and also the set and reset voltage are more uniform and smaller to suitable for memory operation. Moreover, the O2 plasma sample shows excellent memory performance, such as high switching endurance cycles (up to 3 × 103), long retention time for 104 s at 85 °C. These results show that the surface modification with O2 plasma on IWZO CBRAM device is a critical technique for next generation memory applications.",

keywords = "Conductive-bridge RAM (CBRAM), Indium-tungsten-zinc oxide (IWZO), Oxygen-rich oxide, Remote oxygen plasma, Surface modification",

author = "Hsu, {Chih Chieh} and Liu, {Po Tsun} and Gan, {Kai Jhih} and Ruan, {Dun Bao} and Chiu, {Yu Chuan} and Sze, {Simon M.}",

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doi = "10.1016/j.surfcoat.2021.127539",

language = "English",

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journal = "Surface and Coatings Technology",

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TY - JOUR

T1 - Impact of O2 plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

AU - Hsu, Chih Chieh

AU - Liu, Po Tsun

AU - Gan, Kai Jhih

AU - Ruan, Dun Bao

AU - Chiu, Yu Chuan

AU - Sze, Simon M.

PY - 2021/9/25

Y1 - 2021/9/25

N2 - The impact of O2 plasma treatment on novel amorphous oxide InWZnO (IWZO) as conductive bridge random access memory (CBRAM) was investigated. A high-quality film on the surface of IWZO can be obtained by using remote O2 plasma treatment. The uniformity of O2 plasma sample is better than control sample, and also the set and reset voltage are more uniform and smaller to suitable for memory operation. Moreover, the O2 plasma sample shows excellent memory performance, such as high switching endurance cycles (up to 3 × 103), long retention time for 104 s at 85 °C. These results show that the surface modification with O2 plasma on IWZO CBRAM device is a critical technique for next generation memory applications.

AB - The impact of O2 plasma treatment on novel amorphous oxide InWZnO (IWZO) as conductive bridge random access memory (CBRAM) was investigated. A high-quality film on the surface of IWZO can be obtained by using remote O2 plasma treatment. The uniformity of O2 plasma sample is better than control sample, and also the set and reset voltage are more uniform and smaller to suitable for memory operation. Moreover, the O2 plasma sample shows excellent memory performance, such as high switching endurance cycles (up to 3 × 103), long retention time for 104 s at 85 °C. These results show that the surface modification with O2 plasma on IWZO CBRAM device is a critical technique for next generation memory applications.

KW - Conductive-bridge RAM (CBRAM)

KW - Indium-tungsten-zinc oxide (IWZO)

KW - Oxygen-rich oxide

KW - Remote oxygen plasma

KW - Surface modification

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U2 - 10.1016/j.surfcoat.2021.127539

DO - 10.1016/j.surfcoat.2021.127539

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AN - SCOPUS:85111882347

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VL - 422

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

M1 - 127539

ER -

Impact of O₂ plasma treatment on novel amorphous oxide InWZnO on conductive bridge random access memory

Abstract

Keywords

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