Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

T. Y. Chang; T. F. Lei; Tien-Sheng Chao; S. W. Chen; L. M. Kao; S. K. Chen; A. Tuan; T. P. Su

doi:10.1016/S0038-1101(02)00048-5

Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

T. Y. Chang^*, T. F. Lei, Tien-Sheng Chao, S. W. Chen, L. M. Kao, S. K. Chen, A. Tuan, T. P. Su

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

Abstract

In our previous study, using NF₃ annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO₂ and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO₂ and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.

Original language	English
Pages (from-to)	1097-1101
Number of pages	5
Journal	Solid-State Electronics
Volume	46
Issue number	8
DOIs	https://doi.org/10.1016/S0038-1101(02)00048-5
State	Published - 1 Aug 2002

Keywords

Breakdown charge and stress induce leakage current (SILC)
Co-salicide
Fluorine and nitrogen implantation
Gate oxide integrity (GOI)
Leakage performance

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10.1016/S0038-1101(02)00048-5

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title = "Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process",

abstract = "In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.",

keywords = "Breakdown charge and stress induce leakage current (SILC), Co-salicide, Fluorine and nitrogen implantation, Gate oxide integrity (GOI), Leakage performance",

author = "Chang, {T. Y.} and Lei, {T. F.} and Tien-Sheng Chao and Chen, {S. W.} and Kao, {L. M.} and Chen, {S. K.} and A. Tuan and Su, {T. P.}",

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doi = "10.1016/S0038-1101(02)00048-5",

language = "English",

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journal = "Solid-State Electronics",

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TY - JOUR

T1 - Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

AU - Chang, T. Y.

AU - Lei, T. F.

AU - Chao, Tien-Sheng

AU - Chen, S. W.

AU - Kao, L. M.

AU - Chen, S. K.

AU - Tuan, A.

AU - Su, T. P.

PY - 2002/8/1

Y1 - 2002/8/1

N2 - In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.

AB - In our previous study, using NF3 annealed poly-Si to improve gate oxide integrity for Co-silicide process has been proposed [SSDM, 1998, p. 164]. It is very interesting and important to know the mechanism of both F and N incorporation in the SiO2 and Co-salicide. In this study, F and/or N will be implanted into poly-Si with/without Co-salicide process, to identify the interaction of N and F in the SiO2 and Co-salicide process. In our work, we will describe the optimized structure and F/N incorporation for Co-silicide process.

KW - Breakdown charge and stress induce leakage current (SILC)

KW - Co-salicide

KW - Fluorine and nitrogen implantation

KW - Gate oxide integrity (GOI)

KW - Leakage performance

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U2 - 10.1016/S0038-1101(02)00048-5

DO - 10.1016/S0038-1101(02)00048-5

M3 - Article

AN - SCOPUS:0036680404

SN - 0038-1101

VL - 46

SP - 1097

EP - 1101

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 8

ER -

Impact of nitrogen and/or fluorine implantation on deep-submicron Co-salicide process

Abstract

Keywords

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