This article demonstrates the influence of high-Temperature annealing on an interfacial layer (IL) grown by O2 plasma on Si0.5Ge0.5 substrates. The X-ray photoelectron spectroscopy results revealed that under an annealing temperature of 1000 °C, the concentration of germanium oxide in the IL decreased, and an IL with pure silicon oxide (100%) was produced. With a decrease in germanium oxide concentration, the SiGe metal oxide semiconductor capacitor exhibited an excellent interface trap density of 1.6\times10$ 12 cm-2eV-1 with negligible hysteresis. Furthermore, compared with 1000 °C IL annealing, 800 °C IL annealing was more suitable for preferential SiO2 growth without relaxation and dislocation in the SiGe layer, as observed using a transmission electron microscope.
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - 1 Mar 2022|
- High-Temperature annealing
- interface passivation
- SiGe channel