Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates

Meng Chien Lee, Hung Ru Lin, Wei Li Lee, Nien Ju Chung, Guang Li Luo, Chao Hsin Chien*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

This article demonstrates the influence of high-Temperature annealing on an interfacial layer (IL) grown by O2 plasma on Si0.5Ge0.5 substrates. The X-ray photoelectron spectroscopy results revealed that under an annealing temperature of 1000 °C, the concentration of germanium oxide in the IL decreased, and an IL with pure silicon oxide (100%) was produced. With a decrease in germanium oxide concentration, the SiGe metal oxide semiconductor capacitor exhibited an excellent interface trap density of 1.6\times10$ 12 cm-2eV-1 with negligible hysteresis. Furthermore, compared with 1000 °C IL annealing, 800 °C IL annealing was more suitable for preferential SiO2 growth without relaxation and dislocation in the SiGe layer, as observed using a transmission electron microscope.

Original languageEnglish
Pages (from-to)1265-1270
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume69
Issue number3
DOIs
StatePublished - 1 Mar 2022

Keywords

  • High-Temperature annealing
  • interface passivation
  • SiGe channel

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