Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time

K. Saino, S. Horiba, S. Uchiyama, Y. Takaishi, M. Takenaka, T. Uchida, Y. Takada, K. Koyama, H. Miyake, Chen-Ming Hu

    Research output: Contribution to journalArticlepeer-review

    70 Scopus citations

    Abstract

    In this paper we propose a new model for leakage mechanism in tail-mode bits of DRAM data retention characteristics. For main-mode bits, leakage current can be attributed to junction thermal-generation leakage current. For tail-mode bits, it is found for the first time that Gate-Induced Drain Leakage (GIDL) current has a dominant impact. The root cause is electric field enhancement caused by metal precipitates located at the gate-drain overlap region.

    Original languageEnglish
    Pages (from-to)837-840
    Number of pages4
    JournalTechnical Digest - International Electron Devices Meeting
    DOIs
    StatePublished - 1 Jan 2000

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