Impact of current distribution on RRAM array with high and low Ion/Ioff devices

V. Mohammed Zackriya, Albert Chin, Harish M. Kittur

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Using novel circuit design topology to include the sneak path current as a reference input, the performance of two RRAM devices with Ion/Ioff of 26 and 925 were compared for crosspoint array. The RRAM with better current distribution outperforms the RRAM with 36X higher Ion/Ioff, on crosspoint array. Thus, the RRAM devices should aim on tightening the current distribution, where high Ion/Ioff also consumes high power on circuit.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages156-157
Number of pages2
ISBN (Electronic)9781509046591
DOIs
StatePublished - 13 Jun 2017
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: 28 Feb 20172 Mar 2017

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Conference

Conference2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/TerritoryJapan
CityToyama
Period28/02/172/03/17

Keywords

  • I/I and distribution
  • RRAM array

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