TY - GEN
T1 - Impact of current distribution on RRAM array with high and low Ion/Ioff devices
AU - Zackriya, V. Mohammed
AU - Chin, Albert
AU - Kittur, Harish M.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/6/13
Y1 - 2017/6/13
N2 - Using novel circuit design topology to include the sneak path current as a reference input, the performance of two RRAM devices with Ion/Ioff of 26 and 925 were compared for crosspoint array. The RRAM with better current distribution outperforms the RRAM with 36X higher Ion/Ioff, on crosspoint array. Thus, the RRAM devices should aim on tightening the current distribution, where high Ion/Ioff also consumes high power on circuit.
AB - Using novel circuit design topology to include the sneak path current as a reference input, the performance of two RRAM devices with Ion/Ioff of 26 and 925 were compared for crosspoint array. The RRAM with better current distribution outperforms the RRAM with 36X higher Ion/Ioff, on crosspoint array. Thus, the RRAM devices should aim on tightening the current distribution, where high Ion/Ioff also consumes high power on circuit.
KW - I/I and distribution
KW - RRAM array
UR - http://www.scopus.com/inward/record.url?scp=85022054637&partnerID=8YFLogxK
U2 - 10.1109/EDTM.2017.7947557
DO - 10.1109/EDTM.2017.7947557
M3 - Conference contribution
AN - SCOPUS:85022054637
T3 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
SP - 156
EP - 157
BT - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Y2 - 28 February 2017 through 2 March 2017
ER -