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Impact of Crystallization Method on Poly-Si Tunnel FETs
Yi Hsuan Chen
, William Cheng Yu Ma
, Jer Yi Lin
, Chun Yen Lin
, Po Yang Hsu
, Chi Yuan Huang
,
Tien-Sheng Chao
Department of Electrophysics
Research output
:
Contribution to journal
›
Article
›
peer-review
14
Scopus citations
Overview
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Keyphrases
Poly-Si
100%
Crystallization Process
100%
Tunnel FET
100%
Tunnel Field-effect Transistor
100%
Metal-induced Crystallization
60%
Solid-phase Crystallization
60%
Polysilicon
20%
On-state Current
20%
Low Power
20%
Electrical Characteristics
20%
Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs)
20%
Trap Density
20%
Subthreshold Swing
20%
Energy Consumption Reduction
20%
Interface Traps
20%
On-off Ratio
20%
Portable Electronics
20%
Promising Solutions
20%
Tunnel Junction
20%
Bulk Traps
20%
Driving Circuit
20%
Swing Reduction
20%
SS202
20%
Engineering
Field Effect Transistor
100%
Polysilicon
100%
Tunnel
100%
Field-Effect Transistor
71%
Electric Power Utilization
14%
Thin-Film Transistor
14%
Current Ratio
14%
Portable Electronics
14%
Reducing Power
14%
Controllability
14%
Interface Trap
14%
Material Science
Field Effect Transistor
100%
Silicon
33%
Density
16%
Electrical Property
16%
Electronic Circuit
16%
Thin-Film Transistor
16%