Impact of Crystallization Method on Poly-Si Tunnel FETs

Yi Hsuan Chen; William Cheng Yu Ma; Jer Yi Lin; Chun Yen Lin; Po Yang Hsu; Chi Yuan Huang; Tien-Sheng Chao

doi:10.1109/LED.2015.2468060

Impact of Crystallization Method on Poly-Si Tunnel FETs

Yi Hsuan Chen, William Cheng Yu Ma, Jer Yi Lin, Chun Yen Lin, Po Yang Hsu, Chi Yuan Huang, Tien-Sheng Chao

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this letter, the impact of crystallization method on the electrical characteristics of polycrystalline silicon (poly-Si) tunnel field-effect transistors (TFETs) is investigated. Different crystallization methods may result in different amounts of interface traps (N_it) and bulk traps (N_GB). TFETs crystallized with solid-phase crystallization (SPC) and metal-induced lateral crystallization (MILC) were fabricated and compared. In comparison with the SPC TFETs, the MILC TFETs exhibit ∼ 4.5× higher ON-state current I_ON, subthreshold swing reduction ΔS.S. ∼ 202 mV/decade, and larger ∼ 7.2× ON/OFF current ratio. According to the measurement of a monitor poly-Si thin-film transistor, replacing SPC with MILC results in a reduced N_it ∼ 0.60× and a reduced N_GB ∼ 0.36×, respectively. It can enhance the gate-to-tunnel junction controllability. Consequently, lowering trap density favors reducing power consumption of TFETs and provides a promising solution for future low-power driving circuits in portable electronics.

Original language	English
Article number	7194770
Pages (from-to)	1060-1062
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	36
Issue number	10
DOIs	https://doi.org/10.1109/LED.2015.2468060
State	Published - Oct 2015

Keywords

Tunnel field-effect-transistor (TFET)
and metal-induced lateral crystallization (MILC)
poly-Si thin-film transistor (poly-Si TFTs)
trap density

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10.1109/LED.2015.2468060

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title = "Impact of Crystallization Method on Poly-Si Tunnel FETs",

abstract = "In this letter, the impact of crystallization method on the electrical characteristics of polycrystalline silicon (poly-Si) tunnel field-effect transistors (TFETs) is investigated. Different crystallization methods may result in different amounts of interface traps (Nit) and bulk traps (NGB). TFETs crystallized with solid-phase crystallization (SPC) and metal-induced lateral crystallization (MILC) were fabricated and compared. In comparison with the SPC TFETs, the MILC TFETs exhibit ∼ 4.5× higher ON-state current ION, subthreshold swing reduction ΔS.S. ∼ 202 mV/decade, and larger ∼ 7.2× ON/OFF current ratio. According to the measurement of a monitor poly-Si thin-film transistor, replacing SPC with MILC results in a reduced Nit ∼ 0.60× and a reduced NGB ∼ 0.36×, respectively. It can enhance the gate-to-tunnel junction controllability. Consequently, lowering trap density favors reducing power consumption of TFETs and provides a promising solution for future low-power driving circuits in portable electronics.",

keywords = "Tunnel field-effect-transistor (TFET), and metal-induced lateral crystallization (MILC), poly-Si thin-film transistor (poly-Si TFTs), trap density",

author = "Chen, {Yi Hsuan} and Ma, {William Cheng Yu} and Lin, {Jer Yi} and Lin, {Chun Yen} and Hsu, {Po Yang} and Huang, {Chi Yuan} and Tien-Sheng Chao",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

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AU - Chen, Yi Hsuan

AU - Ma, William Cheng Yu

AU - Lin, Jer Yi

AU - Lin, Chun Yen

AU - Hsu, Po Yang

AU - Huang, Chi Yuan

AU - Chao, Tien-Sheng

PY - 2015/10

Y1 - 2015/10

N2 - In this letter, the impact of crystallization method on the electrical characteristics of polycrystalline silicon (poly-Si) tunnel field-effect transistors (TFETs) is investigated. Different crystallization methods may result in different amounts of interface traps (Nit) and bulk traps (NGB). TFETs crystallized with solid-phase crystallization (SPC) and metal-induced lateral crystallization (MILC) were fabricated and compared. In comparison with the SPC TFETs, the MILC TFETs exhibit ∼ 4.5× higher ON-state current ION, subthreshold swing reduction ΔS.S. ∼ 202 mV/decade, and larger ∼ 7.2× ON/OFF current ratio. According to the measurement of a monitor poly-Si thin-film transistor, replacing SPC with MILC results in a reduced Nit ∼ 0.60× and a reduced NGB ∼ 0.36×, respectively. It can enhance the gate-to-tunnel junction controllability. Consequently, lowering trap density favors reducing power consumption of TFETs and provides a promising solution for future low-power driving circuits in portable electronics.

AB - In this letter, the impact of crystallization method on the electrical characteristics of polycrystalline silicon (poly-Si) tunnel field-effect transistors (TFETs) is investigated. Different crystallization methods may result in different amounts of interface traps (Nit) and bulk traps (NGB). TFETs crystallized with solid-phase crystallization (SPC) and metal-induced lateral crystallization (MILC) were fabricated and compared. In comparison with the SPC TFETs, the MILC TFETs exhibit ∼ 4.5× higher ON-state current ION, subthreshold swing reduction ΔS.S. ∼ 202 mV/decade, and larger ∼ 7.2× ON/OFF current ratio. According to the measurement of a monitor poly-Si thin-film transistor, replacing SPC with MILC results in a reduced Nit ∼ 0.60× and a reduced NGB ∼ 0.36×, respectively. It can enhance the gate-to-tunnel junction controllability. Consequently, lowering trap density favors reducing power consumption of TFETs and provides a promising solution for future low-power driving circuits in portable electronics.

KW - Tunnel field-effect-transistor (TFET)

KW - and metal-induced lateral crystallization (MILC)

KW - poly-Si thin-film transistor (poly-Si TFTs)

KW - trap density

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Impact of Crystallization Method on Poly-Si Tunnel FETs

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