Impact of barrier layer on HfO2-based conductive bridge random access memory

Chun An Lin; Chu Jie Huang; Tseung-Yuen Tseng

doi:10.1063/1.5087421

Impact of barrier layer on HfO₂-based conductive bridge random access memory

Chun An Lin, Chu Jie Huang, Tseung-Yuen Tseng

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

In this letter, we report the impact of the barrier layer on the performance of HfO₂-based conductive bridge RAM (CBRAM) devices with TeTiW as the source layer. The considerable improvement of retention in the CBRAM device using TiW as the barrier layer is attributed to the lower amount of oxygen vacancies in the switching layer, which is justified from the O1s core level in X-ray photoelectron spectroscopy analyses. Therefore, the diffusion of Te in the resistive layer of the device with the TiW barrier layer is limited even at high temperature. The TeTiW/TiW/HfO₂/TiN CBRAM device provides an excellent endurance of more than 10⁴ cycles, with an on/off ratio of 200. Such a device also features long retention for up to 10⁴ s at 200 °C.

Original language	English
Article number	093105
Pages (from-to)	1-4
Number of pages	4
Journal	Applied Physics Letters
Volume	114
Issue number	9
DOIs	https://doi.org/10.1063/1.5087421
State	Published - 4 Mar 2019

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abstract = "In this letter, we report the impact of the barrier layer on the performance of HfO2-based conductive bridge RAM (CBRAM) devices with TeTiW as the source layer. The considerable improvement of retention in the CBRAM device using TiW as the barrier layer is attributed to the lower amount of oxygen vacancies in the switching layer, which is justified from the O1s core level in X-ray photoelectron spectroscopy analyses. Therefore, the diffusion of Te in the resistive layer of the device with the TiW barrier layer is limited even at high temperature. The TeTiW/TiW/HfO2/TiN CBRAM device provides an excellent endurance of more than 104 cycles, with an on/off ratio of 200. Such a device also features long retention for up to 104 s at 200 °C.",

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AU - Lin, Chun An

AU - Huang, Chu Jie

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N2 - In this letter, we report the impact of the barrier layer on the performance of HfO2-based conductive bridge RAM (CBRAM) devices with TeTiW as the source layer. The considerable improvement of retention in the CBRAM device using TiW as the barrier layer is attributed to the lower amount of oxygen vacancies in the switching layer, which is justified from the O1s core level in X-ray photoelectron spectroscopy analyses. Therefore, the diffusion of Te in the resistive layer of the device with the TiW barrier layer is limited even at high temperature. The TeTiW/TiW/HfO2/TiN CBRAM device provides an excellent endurance of more than 104 cycles, with an on/off ratio of 200. Such a device also features long retention for up to 104 s at 200 °C.

AB - In this letter, we report the impact of the barrier layer on the performance of HfO2-based conductive bridge RAM (CBRAM) devices with TeTiW as the source layer. The considerable improvement of retention in the CBRAM device using TiW as the barrier layer is attributed to the lower amount of oxygen vacancies in the switching layer, which is justified from the O1s core level in X-ray photoelectron spectroscopy analyses. Therefore, the diffusion of Te in the resistive layer of the device with the TiW barrier layer is limited even at high temperature. The TeTiW/TiW/HfO2/TiN CBRAM device provides an excellent endurance of more than 104 cycles, with an on/off ratio of 200. Such a device also features long retention for up to 104 s at 200 °C.

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Impact of barrier layer on HfO₂-based conductive bridge random access memory

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