Impact of annealing environment on performance of InWZnO conductive bridge random access memory

Chih Chieh Hsu; Po Tsun Liu; Kai Jhih Gan; Dun Bao Ruan; Yu Chuan Chiu; Simon M. Sze

doi:10.1016/j.vacuum.2021.110321

Impact of annealing environment on performance of InWZnO conductive bridge random access memory

Chih Chieh Hsu, Po Tsun Liu^*, Kai Jhih Gan, Dun Bao Ruan, Yu Chuan Chiu, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 10⁴ cycles, while even longer retention time can be achieved at 85 °C, compared with the as-deposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.

Original language	English
Article number	110321
Journal	Vacuum
Volume	191
DOIs	https://doi.org/10.1016/j.vacuum.2021.110321
State	Published - Sep 2021

Keywords

Conductive-bridge RAM (CBRAM)
Endurance cycle
InWZnO
Low temperature process
Oxygen vacancy modulation

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10.1016/j.vacuum.2021.110321

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title = "Impact of annealing environment on performance of InWZnO conductive bridge random access memory",

abstract = "In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 104 cycles, while even longer retention time can be achieved at 85 °C, compared with the as-deposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.",

keywords = "Conductive-bridge RAM (CBRAM), Endurance cycle, InWZnO, Low temperature process, Oxygen vacancy modulation",

author = "Hsu, {Chih Chieh} and Liu, {Po Tsun} and Gan, {Kai Jhih} and Ruan, {Dun Bao} and Chiu, {Yu Chuan} and Sze, {Simon M.}",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2021",

month = sep,

doi = "10.1016/j.vacuum.2021.110321",

language = "English",

volume = "191",

journal = "Vacuum",

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TY - JOUR

T1 - Impact of annealing environment on performance of InWZnO conductive bridge random access memory

AU - Hsu, Chih Chieh

AU - Liu, Po Tsun

AU - Gan, Kai Jhih

AU - Ruan, Dun Bao

AU - Chiu, Yu Chuan

AU - Sze, Simon M.

PY - 2021/9

Y1 - 2021/9

N2 - In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 104 cycles, while even longer retention time can be achieved at 85 °C, compared with the as-deposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.

AB - In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 104 cycles, while even longer retention time can be achieved at 85 °C, compared with the as-deposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.

KW - Conductive-bridge RAM (CBRAM)

KW - Endurance cycle

KW - InWZnO

KW - Low temperature process

KW - Oxygen vacancy modulation

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U2 - 10.1016/j.vacuum.2021.110321

DO - 10.1016/j.vacuum.2021.110321

M3 - Article

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SN - 0042-207X

VL - 191

JO - Vacuum

JF - Vacuum

M1 - 110321

ER -

Impact of annealing environment on performance of InWZnO conductive bridge random access memory

Abstract

Keywords

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