III-V MOSFETs with a new self-aligned contact

Xingui Zhang; Huaxin Guo; Chih Hsin Ko; Clement H. Wann; Chao Ching Cheng; Hau Yu Lin; Hock Chun Chin; Xiao Gong; Phyllis Shi Ya Lim; Guang Li Luo; Chun Yen Chang; Chao-Hsin Chien; Zong You Han; Shih Chiang Huang; Yee Chia Yeo.

doi:10.1109/VLSIT.2010.5556240

III-V MOSFETs with a new self-aligned contact

Xingui Zhang^*, Huaxin Guo, Chih Hsin Ko, Clement H. Wann, Chao Ching Cheng, Hau Yu Lin, Hock Chun Chin, Xiao Gong, Phyllis Shi Ya Lim, Guang Li Luo, Chun Yen Chang, Chao-Hsin Chien, Zong You Han, Shih Chiang Huang, Yee Chia Yeo.

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.

Original language	English
Title of host publication	2010 Symposium on VLSI Technology, VLSIT 2010
Pages	233-234
Number of pages	2
DOIs	https://doi.org/10.1109/VLSIT.2010.5556240
State	Published - 2010
Event	2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States Duration: 15 Jun 2010 → 17 Jun 2010

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Conference

Conference	2010 Symposium on VLSI Technology, VLSIT 2010
Country/Territory	United States
City	Honolulu, HI
Period	15/06/10 → 17/06/10

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10.1109/VLSIT.2010.5556240

Cite this

Zhang, X., Guo, H., Ko, C. H., Wann, C. H., Cheng, C. C., Lin, H. Y., Chin, H. C., Gong, X., Lim, P. S. Y., Luo, G. L., Chang, C. Y., Chien, C.-H., Han, Z. Y., Huang, S. C., & Yeo., Y. C. (2010). III-V MOSFETs with a new self-aligned contact. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 233-234). Article 5556240 (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556240

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title = "III-V MOSFETs with a new self-aligned contact",

abstract = "We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.",

author = "Xingui Zhang and Huaxin Guo and Ko, {Chih Hsin} and Wann, {Clement H.} and Cheng, {Chao Ching} and Lin, {Hau Yu} and Chin, {Hock Chun} and Xiao Gong and Lim, {Phyllis Shi Ya} and Luo, {Guang Li} and Chang, {Chun Yen} and Chao-Hsin Chien and Han, {Zong You} and Huang, {Shih Chiang} and Yeo., {Yee Chia}",

year = "2010",

doi = "10.1109/VLSIT.2010.5556240",

language = "English",

isbn = "9781424476374",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

pages = "233--234",

booktitle = "2010 Symposium on VLSI Technology, VLSIT 2010",

note = "2010 Symposium on VLSI Technology, VLSIT 2010 ; Conference date: 15-06-2010 Through 17-06-2010",

}

Zhang, X, Guo, H, Ko, CH, Wann, CH, Cheng, CC, Lin, HY, Chin, HC, Gong, X, Lim, PSY, Luo, GL, Chang, CY, Chien, C-H, Han, ZY, Huang, SC & Yeo., YC 2010, III-V MOSFETs with a new self-aligned contact. in 2010 Symposium on VLSI Technology, VLSIT 2010., 5556240, Digest of Technical Papers - Symposium on VLSI Technology, pp. 233-234, 2010 Symposium on VLSI Technology, VLSIT 2010, Honolulu, HI, United States, 15/06/10. https://doi.org/10.1109/VLSIT.2010.5556240

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T1 - III-V MOSFETs with a new self-aligned contact

AU - Zhang, Xingui

AU - Guo, Huaxin

AU - Ko, Chih Hsin

AU - Wann, Clement H.

AU - Cheng, Chao Ching

AU - Lin, Hau Yu

AU - Chin, Hock Chun

AU - Gong, Xiao

AU - Lim, Phyllis Shi Ya

AU - Luo, Guang Li

AU - Chang, Chun Yen

AU - Chien, Chao-Hsin

AU - Han, Zong You

AU - Huang, Shih Chiang

AU - Yeo., Yee Chia

PY - 2010

Y1 - 2010

N2 - We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.

AB - We report the first demonstration of III-V n-MOSFETs with self-aligned contact technology. The self-aligned contact was formed using a salicide-like process which is compatible with CMOS process flow. A new epitaxy process was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. Nickel was deposited and annealed to form NiGeSi, and unreacted metal was removed. A second anneal diffuses Ge and Si into GaAs to form heavily n+ doped regions, and a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. MOSFETs with the new self-aligned metallization process were realized.

UR - http://www.scopus.com/inward/record.url?scp=77957886344&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2010.5556240

DO - 10.1109/VLSIT.2010.5556240

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AN - SCOPUS:77957886344

SN - 9781424476374

T3 - Digest of Technical Papers - Symposium on VLSI Technology

SP - 233

EP - 234

BT - 2010 Symposium on VLSI Technology, VLSIT 2010

T2 - 2010 Symposium on VLSI Technology, VLSIT 2010

Y2 - 15 June 2010 through 17 June 2010

ER -

III-V MOSFETs with a new self-aligned contact

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