Original language | English |
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Number of pages | 1 |
Journal | IEEE Transactions on Electron Devices |
Volume | 28 |
Issue number | 10 |
DOIs | |
State | Published - 1 Jan 1981 |
I-2 Shallow Silicide Contact for Shallow Junction Devices
King-Ning Tu*
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review