@inproceedings{c32fa46bfe9b44f287f27031b6ebbd3f,
title = "Hysteresis improvements by introducing a double-active-layered structure in a-InGaZnO TFTs",
abstract = "A-IGO/a-IGZO TFTs exhibited S.S of 0.4 V/decade and hysteresis of 0.40V, whereas a-IGZO TFTs showed S.S of 0.93 V/decade and hysteresis of 1.35V. A smoother surface roughness of 0.25nm in a-IGZO film was obtained by a double-active-layered structure with a-IGO/a-IGZO. A-IGO/a-IGZO TFTs also presented less charge trapping under NBIS stressing.",
keywords = "A-IGO, A-IGZO, Hysteresis, Thin Film Transistors",
author = "Tsai, {Yun Chu} and Chan, {Feng Jui} and Po-Tsun Liu and Shieh, {Han Ping D.}",
year = "2014",
month = jan,
day = "1",
language = "English",
series = "21st International Display Workshops 2014, IDW 2014",
publisher = "Society for Information Display",
pages = "286--289",
booktitle = "21st International Display Workshops 2014, IDW 2014",
address = "United States",
note = "21st International Display Workshops 2014, IDW 2014 ; Conference date: 03-12-2014 Through 05-12-2014",
}