InGaN and GaN are adopted for high efficiency, wide color, and low power consumption micro-LED. They require a defect-free and high throughput fabrication. The defect-free fabrication has been already provided by Cl2 neutral beam (NB) etching, on the other hand, the issue of the throughput improving is remained. In this study, we demonstrated high-speed, high accuracy, and high throughput etching adopting hydrogen iodide (HI) NB as new etching gas. For the InGaN, HI NB provided the high etching rate due to the higher volatile etching product of InI3 than InCl3 in case of Cl2 NB. The surface etched by HI did not have any etch residue. Additionally, we found that HI NB could realize no reduction of PL emission intensity because of maintaining the defect-free etching surface. Therefore, HI NB could achieve the high throughput and defect-free etching for InGaNand GaN without any IQE reduction.