Hydrogen Iodide (HI) Neutral Beam Etching for InGaN/GaN Micro-LED

Takahiro Ishihara, Daisuke Ohori, Xuelun Wang, Kazuhiko Endo, Nobuhiro Natori, Daisuke Sato, Yi-Ming Li, Seiji Samukawa*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


InGaN and GaN are adopted for high efficiency, wide color, and low power consumption micro-LED. They require a defect-free and high throughput fabrication. The defect-free fabrication has been already provided by Cl2 neutral beam (NB) etching, on the other hand, the issue of the throughput improving is remained. In this study, we demonstrated high-speed, high accuracy, and high throughput etching adopting hydrogen iodide (HI) NB as new etching gas. For the InGaN, HI NB provided the high etching rate due to the higher volatile etching product of InI3 than InCl3 in case of Cl2 NB. The surface etched by HI did not have any etch residue. Additionally, we found that HI NB could realize no reduction of PL emission intensity because of maintaining the defect-free etching surface. Therefore, HI NB could achieve the high throughput and defect-free etching for InGaNand GaN without any IQE reduction.

Original languageEnglish
Title of host publication2022 IEEE 22nd International Conference on Nanotechnology, NANO 2022
PublisherIEEE Computer Society
Number of pages4
ISBN (Electronic)9781665452250
StatePublished - 2022
Event22nd IEEE International Conference on Nanotechnology, NANO 2022 - Palma de Mallorca, Spain
Duration: 4 Jul 20228 Jul 2022

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380


Conference22nd IEEE International Conference on Nanotechnology, NANO 2022
CityPalma de Mallorca


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