Abstract
We have investigated the hybridization of the electron states, the light-hole states and the heavy-hole states in InAs/GaSb broken-gap quantum wells. This effect is profound when the InAs layer and the GaSb layer are sufficiently thick such that the electron level lies below the heavy-hole level and the light-hole level at zone center. To calculate the dispersions and the wave functions in these structures we have applied the scattering matrix algorithm to the eight-band k · p model. We have found a hybridization gap as large as 20 meV resulting from the anticrossing of the electron and the light-hole dispersion curves. A multiple anticrossing of the electron states, the light-hole states and the heavy-hole states may occur when the heavy hole level lies in the hybridization gap produced by the electron states and the light-hole states. This unusual hybridization of the three subbands, which behaves differently for the "spin-up" and the "spin-down" states, has been investigated in details around the anticrossing point. While the electronlike and light holelike states mix strongly, the heavy holelike state may remain unperturbed.
Original language | English |
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Article number | 235332 |
Pages (from-to) | 2353321-2353328 |
Number of pages | 8 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 64 |
Issue number | 23 |
DOIs | |
State | Published - 15 Dec 2001 |