Hybrid Photosensitive Field Effect Transistor Based on Conjugated Polythiophene and Perovskite Nanocrystal

Gen Wen Hsieh*, Yu Sheng Zhou, Hao Jen Cheng, Wei Syun Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

P-channel solution-processed hybrid field effect transistors based on a blend of conjugated polythiophene and perovskite nanocrystals show a carrier mobility enhancement of more than 166% with respect to that of pristine polythiophene devices. The performed devices under illumination show significant photoresponse and external quantum efficiency. This work may further our understanding on the interaction between polythiophene and perovskite nanostructures.

Original languageEnglish
Title of host publication30th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages136-138
Number of pages3
ISBN (Electronic)9784991216947
StatePublished - 2023
Event30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Hybrid, Kyoto, Japan
Duration: 4 Jul 20237 Jul 2023

Publication series

Name30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings

Conference

Conference30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023
Country/TerritoryJapan
CityHybrid, Kyoto
Period4/07/237/07/23

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