Hybrid carbon nanotube/silicon Schottky junction solar cells

Sih Han Chen, Yi Chun Lai, Pei Ting Tsai, Yi Cheng Lin, Yan Nan Lin, Chi Hsien Huang, Hsin-Fei Meng, Pei-Chen Yu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this work, highly transparent and conductive multi-wall-carbon nanotubes (MW-CNTs) are employed to realize solution-processed, hybrid silicon (Si) Schottky-junction solar cells. We first describe the optimization of device structures on silicon wafers with nanowire and micropyramidal surface textures, and compare the device characteristics with those of hybrid cells based on Si and poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS). The optimized processing conditions include the length of silicon nanowires, the annealing temperature, and the shading ratio of the frontal silver grids. It is found that the hybrid CNT cells outperform the hybrid PEDOT:PSS counterpart under individually optimized processing conditions due to better transparency and conductivity of CNTs than PEDOT:PSS. The best hybrid CNT cells, fabricated using a 14% grid shield ratio, 150 °C annealing temperature, and 150nm nanowire length, achieve a PCE of 11.90% and 13.82% in micro-pyramid and nanowire (NW) textured silicon, respectively, in contrast to 7.43% and 12.96% for hybrid PEDOT:PSS cells. To control the rear surface recombination, we further employ two solution-processed, small-molecule materials, Tris(8-hydroxyquinolinato) aluminium (Alq3) and 1,3-bis(2-(4-tert-butylphenyl)-1,3,4-oxadiazol-5-yl) benzene (OXD-7) via a blade-coating technique between the silicon wafer and aluminum electrode. As a result, the PCE of hybrid CNT/Si NW solar cells is enhanced to 13.92% and 14.41% with the insertion of the Alq3 and OXD-7 rear interlayer, respectively. With the high power conversion efficiency (PCE), manufacturing Si-based solar cells at temperatures below 150 °C without high vacuum conditions not only significantly lowers the fabrication cost, but also enables the use of ultrathin substrates to save on the material cost for the future.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1617-1619
Number of pages3
ISBN (Electronic)9781509027248
DOIs
StatePublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 201610 Jun 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Conference

Conference43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States
CityPortland
Period5/06/1610/06/16

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