How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?
- Jenn-Fang Chen*
- , Y. C. Lin
- , C. H. Chiang
- , Ross C.C. Chen
- , Yung-Fu Chen
- , Y. H. Wu
- , Li Chang
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
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