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How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?
Jenn-Fang Chen*, Y. C. Lin, C. H. Chiang, Ross C.C. Chen, Yung-Fu Chen, Y. H. Wu, Li Chang
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
11
Scopus
citations