Hot-Electron Induced Excess Carriers in MOSFET's

S. Tam; F. C. Hsu; P. K. Ko; Chen-Ming Hu; R. S. Muller

doi:10.1109/EDL.1982.25605

Hot-Electron Induced Excess Carriers in MOSFET's

S. Tam, F. C. Hsu, P. K. Ko, Chen-Ming Hu, R. S. Muller

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The existence of minority carriers in the substrate of n-channel MOSFET's operating in the saturation region is shown to be induced by turn-on of the source-substrate junction and photon generation. The two mechanisms are demonstrated experimentally and the photon-generation mechanism is further illustrated on a p-well CMOS wafer. Photon generation poses a constraint in VLSI dynamic RAM design.

Original language	English
Pages (from-to)	376-378
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	3
Issue number	12
DOIs	https://doi.org/10.1109/EDL.1982.25605
State	Published - 1 Jan 1982

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abstract = "The existence of minority carriers in the substrate of n-channel MOSFET's operating in the saturation region is shown to be induced by turn-on of the source-substrate junction and photon generation. The two mechanisms are demonstrated experimentally and the photon-generation mechanism is further illustrated on a p-well CMOS wafer. Photon generation poses a constraint in VLSI dynamic RAM design.",

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AB - The existence of minority carriers in the substrate of n-channel MOSFET's operating in the saturation region is shown to be induced by turn-on of the source-substrate junction and photon generation. The two mechanisms are demonstrated experimentally and the photon-generation mechanism is further illustrated on a p-well CMOS wafer. Photon generation poses a constraint in VLSI dynamic RAM design.

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Hot-Electron Induced Excess Carriers in MOSFET's

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