Hot-Electron Induced Excess Carriers in MOSFET's

S. Tam, F. C. Hsu, P. K. Ko, Chen-Ming Hu, R. S. Muller

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


The existence of minority carriers in the substrate of n-channel MOSFET's operating in the saturation region is shown to be induced by turn-on of the source-substrate junction and photon generation. The two mechanisms are demonstrated experimentally and the photon-generation mechanism is further illustrated on a p-well CMOS wafer. Photon generation poses a constraint in VLSI dynamic RAM design.

Original languageEnglish
Pages (from-to)376-378
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
StatePublished - 1 Jan 1982


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