Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks

Yu Lin Chen*, Wen-Kuan Yeh, Heng Tung Hsu, Ke Horng Chen, Wen Chin Lin, Tien Han Yu, Hung Ting Chou, D. Godwin Raj, D. Godfrey

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt base and low Vt base gate stacks with different work functions. It is evident that: (i) The standard Vt device sustains lower effective stress bias due to the difference in threshold voltage, resulting in a more stable threshold voltage than the low Vt base device, and (ii) the transconductance of the single N- and P-type FinFET is more severely degraded than the multi-fin N- and P-type FinFET, mainly because multi N- and P-type Finfet has coupe effect, which effectively reduces the impact of HCI.

Original languageEnglish
Article number035007
JournalECS Journal of Solid State Science and Technology
Volume12
Issue number3
DOIs
StatePublished - Mar 2023

Fingerprint

Dive into the research topics of 'Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks'. Together they form a unique fingerprint.

Cite this