Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory

Wei Liang Lin; Wen Jer Tsai; C. C. Cheng; Chun Chang Lu; S. H. Ku; Y. W. Chang; Guan Wei Wu; Lenvis Liu; S. W. Hwang; Tao Cheng Lu; Kuang Chao Chen; Tseung-Yuen Tseng; Chih Yuan Lu

doi:10.1109/VLSI-TSA.2019.8804652

Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory

Wei Liang Lin^*, Wen Jer Tsai, C. C. Cheng, Chun Chang Lu, S. H. Ku, Y. W. Chang, Guan Wei Wu, Lenvis Liu, S. W. Hwang, Tao Cheng Lu, Kuang Chao Chen, Tseung-Yuen Tseng, Chih Yuan Lu

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

We investigate a hot-carrier injection-induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a 'down-coupling' region and a 'pre-charge' regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-Turn-on schemes are proposed to mitigate this disturb.

Original language	English
Title of host publication	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Number of pages	2
ISBN (Electronic)	9781728109428
DOIs	https://doi.org/10.1109/VLSI-TSA.2019.8804652
State	Published - 22 Apr 2019
Event	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan Duration: 22 Apr 2019 → 25 Apr 2019

Publication series

Name	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Country/Territory	Taiwan
City	Hsinchu
Period	22/04/19 → 25/04/19

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10.1109/VLSI-TSA.2019.8804652

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Lin, W. L., Tsai, W. J., Cheng, C. C., Lu, C. C., Ku, S. H., Chang, Y. W., Wu, G. W., Liu, L., Hwang, S. W., Lu, T. C., Chen, K. C., Tseng, T-Y., & Lu, C. Y. (2019). Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 [8804652] (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2019.8804652

Lin, Wei Liang ; Tsai, Wen Jer ; Cheng, C. C. et al. / Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory. 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

@inproceedings{6a72e9f44eb144d1a8131ccf36866346,

title = "Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory",

abstract = "We investigate a hot-carrier injection-induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a 'down-coupling' region and a 'pre-charge' regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-Turn-on schemes are proposed to mitigate this disturb.",

author = "Lin, {Wei Liang} and Tsai, {Wen Jer} and Cheng, {C. C.} and Lu, {Chun Chang} and Ku, {S. H.} and Chang, {Y. W.} and Wu, {Guan Wei} and Lenvis Liu and Hwang, {S. W.} and Lu, {Tao Cheng} and Chen, {Kuang Chao} and Tseung-Yuen Tseng and Lu, {Chih Yuan}",

year = "2019",

month = apr,

day = "22",

doi = "10.1109/VLSI-TSA.2019.8804652",

language = "English",

series = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",

address = "United States",

note = "null ; Conference date: 22-04-2019 Through 25-04-2019",

}

Lin, WL, Tsai, WJ, Cheng, CC, Lu, CC, Ku, SH, Chang, YW, Wu, GW, Liu, L, Hwang, SW, Lu, TC, Chen, KC, Tseng, T-Y & Lu, CY 2019, Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory. in 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019., 8804652, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Institute of Electrical and Electronics Engineers Inc., 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Hsinchu, Taiwan, 22/04/19. https://doi.org/10.1109/VLSI-TSA.2019.8804652

Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory. / Lin, Wei Liang; Tsai, Wen Jer; Cheng, C. C. et al.

2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8804652 (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory

AU - Lin, Wei Liang

AU - Tsai, Wen Jer

AU - Cheng, C. C.

AU - Lu, Chun Chang

AU - Ku, S. H.

AU - Chang, Y. W.

AU - Wu, Guan Wei

AU - Liu, Lenvis

AU - Hwang, S. W.

AU - Lu, Tao Cheng

AU - Chen, Kuang Chao

AU - Tseng, Tseung-Yuen

AU - Lu, Chih Yuan

PY - 2019/4/22

Y1 - 2019/4/22

N2 - We investigate a hot-carrier injection-induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a 'down-coupling' region and a 'pre-charge' regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-Turn-on schemes are proposed to mitigate this disturb.

AB - We investigate a hot-carrier injection-induced program disturb in a 3D NAND flash memory. As there exist specific coding patterns, a 'down-coupling' region and a 'pre-charge' regions are formed during program-verify and the following program phases, respectively, in the inhibit cell strings. A high heating field is built nearby the PGM wordline. Hot carriers may inject into the inhibit cells as Vpgm is applied. Soft ramp-down and pre-Turn-on schemes are proposed to mitigate this disturb.

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U2 - 10.1109/VLSI-TSA.2019.8804652

DO - 10.1109/VLSI-TSA.2019.8804652

M3 - Conference contribution

AN - SCOPUS:85072115392

T3 - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

BT - 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 22 April 2019 through 25 April 2019

ER -

Lin WL, Tsai WJ, Cheng CC, Lu CC, Ku SH, Chang YW et al. Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8804652. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). doi: 10.1109/VLSI-TSA.2019.8804652

Hot-carrier injection-induced disturb and improvement methods in 3d NAND flash memory

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