Hot carrier degradations of dynamic threshold silicon on insulator p-type metal-oxide-semiconductor field effect transistors

Keyphrases

• MOSFET 100%
• Silicon-on-insulator 100%
• Hot Carrier Degradation 100%
• Dynamic Threshold 100%
• P-type Metal Oxide Semiconductor 100%
• Threshold Mode 83%
• T Gate 50%
• Gate Structure 33%
• Enhanced Degradation 33%
• Threshold Voltage Shift 16%
• Drive Current 16%
• Transconductance 16%
• Room Temperature 16%
• Elevated Temperature 16%
• High Temperature 16%
• Hot Carrier Effect 16%
• Impact Ionization 16%
• Potential Distribution 16%
• Enlargement 16%
• Maximum Transconductance 16%
• Hot-carrier-induced Degradation 16%
• Reduced Impact 16%

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Silicon on Insulator 100%
• Normal Modes 100%
• Current Drive 50%
• Room Temperature 50%
• Elevated Temperature 50%
• Induced Degradation 50%
• Carrier Effect 50%
• Impact Ionization 50%
• Potential Distribution 50%

Material Science

• Hot Carrier 100%
• Silicon 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Type Metal 100%