Hopping transport of electrons via Si-Dot

Hiroshi Watanabe*

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

4 Scopus citations

Abstract

We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.

Original languageEnglish
Pages249-252
Number of pages4
StatePublished - Sep 2007
Event12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
Duration: 25 Sep 200727 Sep 2007

Conference

Conference12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Country/TerritoryAustria
CityVienna
Period25/09/0727/09/07

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