Hopping transport of electrons via Si-Dot

Hiroshi Watanabe

doi:10.1007/978-3-211-72861-1_59

Hopping transport of electrons via Si-Dot

Hiroshi Watanabe^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.

Original language	English
Pages	249-252
Number of pages	4
DOIs	https://doi.org/10.1007/978-3-211-72861-1_59
State	Published - Sep 2007
Event	12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria Duration: 25 Sep 2007 → 27 Sep 2007

Conference

Conference	12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Country/Territory	Austria
City	Vienna
Period	25/09/07 → 27/09/07

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10.1007/978-3-211-72861-1_59

Cite this

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title = "Hopping transport of electrons via Si-Dot",

abstract = "We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.",

author = "Hiroshi Watanabe",

year = "2007",

month = sep,

doi = "10.1007/978-3-211-72861-1_59",

language = "English",

pages = "249--252",

note = "12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 ; Conference date: 25-09-2007 Through 27-09-2007",

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T1 - Hopping transport of electrons via Si-Dot

AU - Watanabe, Hiroshi

PY - 2007/9

Y1 - 2007/9

N2 - We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.

AB - We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.

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U2 - 10.1007/978-3-211-72861-1_59

DO - 10.1007/978-3-211-72861-1_59

M3 - Paper

AN - SCOPUS:74349102614

SP - 249

EP - 252

T2 - 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Y2 - 25 September 2007 through 27 September 2007

ER -

Hopping transport of electrons via Si-Dot

Abstract

Conference

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