Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

Chung Wei Hsu, Yu Fen Wang, Chia Chen Wan, I. Ting Wang, Chun Tse Chou, Wei Li Lai, Yao Jen Lee, Tuo-Hung Hou

    Research output: Contribution to journalArticlepeer-review

    62 Scopus citations

    Abstract

    Three-dimensional vertical resistive-switching random access memory (V-RRAM) is the most anticipated candidate for fulfilling the strict requirements of the disruptive storage-class memory technology, including low bit cost, fast access time, low-power nonvolatile storage, and excellent endurance. However, an essential self-selecting resistive-switching cell that satisfies these requirements has yet to be developed. In this study, we developed a TaOx/TiO2 double-layer V-RRAM containing numerous highly desired features, including: (1) a self-rectifying ratio of up to 103 with a sub-μA operating current, (2) little cycle-to-cycle and layer-to-layer variation, (3) a steep vertical sidewall profile for high-density integration, (4) forming-free and self-compliance characteristics for a simple peripheral circuit design, and (5) an extrapolated endurance of over 1015 cycles at 100 °C. Furthermore, the switching and self-rectifying mechanisms were successfully modeled using oxygen ion migration and homogeneous barrier modulation. We also suggest the new possibility of monolithically integrating working and storage memory by exploiting a unique tradeoff between retention time and endurance.

    Original languageEnglish
    Article number165202
    Pages (from-to)1-7
    Number of pages7
    JournalNanotechnology
    Volume25
    Issue number16
    DOIs
    StatePublished - 25 Apr 2014

    Keywords

    • current conduction mechanism
    • resistive-switching random access memory
    • self rectification
    • storage-class memory
    • three-dimensional memory

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