Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

C. H. Wang; S. P. Chang; P. H. Ku; J. C. Li; Yu-Pin Lan; Chien-Chung Lin; H. C. Yang; Hao-Chung Kuo; Tien-chang Lu; S. C. Wang; C. Y. Chang

doi:10.1063/1.3655903

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

C. H. Wang^*
, S. P. Chang
, P. H. Ku
, J. C. Li
, Yu-Pin Lan
, Chien-Chung Lin
, H. C. Yang
, Hao-Chung Kuo
, Tien-chang Lu
, S. C. Wang
, C. Y. Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

137 Scopus citations

Abstract

Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The simulation of GQB LED design predicts enhancement of the hole transport in the active region at both low and high current densities. The fabricated LED with GQB structure exhibits lower series resistance and substantially reduced droop behavior of only 6 in comparison with 34 for conventional LED, supporting the improvement of hole transport in our design.

Original language	English
Article number	171106
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	99
Issue number	17
DOIs	https://doi.org/10.1063/1.3655903
State	Published - 24 Oct 2011

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title = "Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers",

abstract = "Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The simulation of GQB LED design predicts enhancement of the hole transport in the active region at both low and high current densities. The fabricated LED with GQB structure exhibits lower series resistance and substantially reduced droop behavior of only 6 in comparison with 34 for conventional LED, supporting the improvement of hole transport in our design.",

author = "Wang, \{C. H.\} and Chang, \{S. P.\} and Ku, \{P. H.\} and Li, \{J. C.\} and Yu-Pin Lan and Chien-Chung Lin and Yang, \{H. C.\} and Hao-Chung Kuo and Tien-chang Lu and Wang, \{S. C.\} and Chang, \{C. Y.\}",

year = "2011",

month = oct,

day = "24",

doi = "10.1063/1.3655903",

language = "English",

volume = "99",

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journal = "Applied Physics Letters",

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T1 - Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

AU - Wang, C. H.

AU - Chang, S. P.

AU - Ku, P. H.

AU - Li, J. C.

AU - Lan, Yu-Pin

AU - Lin, Chien-Chung

AU - Yang, H. C.

AU - Kuo, Hao-Chung

AU - Lu, Tien-chang

AU - Wang, S. C.

AU - Chang, C. Y.

PY - 2011/10/24

Y1 - 2011/10/24

N2 - Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The simulation of GQB LED design predicts enhancement of the hole transport in the active region at both low and high current densities. The fabricated LED with GQB structure exhibits lower series resistance and substantially reduced droop behavior of only 6 in comparison with 34 for conventional LED, supporting the improvement of hole transport in our design.

AB - Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The simulation of GQB LED design predicts enhancement of the hole transport in the active region at both low and high current densities. The fabricated LED with GQB structure exhibits lower series resistance and substantially reduced droop behavior of only 6 in comparison with 34 for conventional LED, supporting the improvement of hole transport in our design.

UR - https://www.scopus.com/pages/publications/80555140013

U2 - 10.1063/1.3655903

DO - 10.1063/1.3655903

M3 - Article

AN - SCOPUS:80555140013

SN - 0003-6951

VL - 99

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171106

ER -

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

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