Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer

Yi Keng Fu; Yu Hsuan Lu; Rong Xuan; Jenn-Fang Chen; Yan Kuin Su

doi:10.7567/JJAP.52.08JK05

Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer

Yi Keng Fu, Yu Hsuan Lu, Rong Xuan, Jenn-Fang Chen, Yan Kuin Su

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED.

Original language	English
Article number	08JK05
Journal	Japanese Journal of Applied Physics
Volume	52
Issue number	8 PART 2
DOIs	https://doi.org/10.7567/JJAP.52.08JK05
State	Published - 1 Aug 2013

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title = "Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer",

abstract = "The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED.",

author = "Fu, {Yi Keng} and Lu, {Yu Hsuan} and Rong Xuan and Jenn-Fang Chen and Su, {Yan Kuin}",

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AU - Lu, Yu Hsuan

AU - Xuan, Rong

AU - Chen, Jenn-Fang

AU - Su, Yan Kuin

PY - 2013/8/1

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N2 - The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED.

AB - The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED.

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Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer

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