Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer

Yi Keng Fu, Yu Hsuan Lu, Rong Xuan, Jenn-Fang Chen, Yan Kuin Su

    Research output: Contribution to journalArticlepeer-review

    6 Scopus citations

    Abstract

    The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED.

    Original languageEnglish
    Article number08JK05
    JournalJapanese Journal of Applied Physics
    Volume52
    Issue number8 PART 2
    DOIs
    StatePublished - 1 Aug 2013

    Fingerprint

    Dive into the research topics of 'Hole injection and electron overflow improvement in 365nm light-emitting diodes by band-engineering electron blocking layer'. Together they form a unique fingerprint.

    Cite this