Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers

Hung Pin D. Yang*, I. Liang Chen, Chen Hong Lee, Chih Hong Chiou, Tsin Dong Lee, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Hao-Chung Kuo, Jim Y. Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.

Original languageEnglish
Pages (from-to)L509-L511
Number of pages3
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number21
DOIs
StatePublished - 25 May 2007

Keywords

  • Highly strained
  • InGaAs
  • VCSEL

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