Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

S. J. Chang; Hsin-Chieh Yu; Y. K. Su; I. L. Chen; T. D. Lee; C. M. Lu; C. H. Chiou; Z. H. Lee; H. P. Yang; C. P. Sung

doi:10.1016/j.mseb.2005.03.011

Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

S. J. Chang^*, Hsin-Chieh Yu, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H. Chiou, Z. H. Lee, H. P. Yang, C. P. Sung

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.

Original language	English
Pages (from-to)	60-63
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	121
Issue number	1-2
DOIs	https://doi.org/10.1016/j.mseb.2005.03.011
State	Published - 25 Jul 2005

Keywords

Highly strain
InGaAs
Oxide mode
VCSEL

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10.1016/j.mseb.2005.03.011

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@article{9bda5440bc2a42d98617f178ee2d8691,

title = "Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm",

abstract = "Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.",

keywords = "Highly strain, InGaAs, Oxide mode, VCSEL",

author = "Chang, {S. J.} and Hsin-Chieh Yu and Su, {Y. K.} and Chen, {I. L.} and Lee, {T. D.} and Lu, {C. M.} and Chiou, {C. H.} and Lee, {Z. H.} and Yang, {H. P.} and Sung, {C. P.}",

year = "2005",

month = jul,

day = "25",

doi = "10.1016/j.mseb.2005.03.011",

language = "English",

volume = "121",

pages = "60--63",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Taylor and Francis Ltd.",

number = "1-2",

}

TY - JOUR

T1 - Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

AU - Chang, S. J.

AU - Yu, Hsin-Chieh

AU - Su, Y. K.

AU - Chen, I. L.

AU - Lee, T. D.

AU - Lu, C. M.

AU - Chiou, C. H.

AU - Lee, Z. H.

AU - Yang, H. P.

AU - Sung, C. P.

PY - 2005/7/25

Y1 - 2005/7/25

N2 - Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.

AB - Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.

KW - Highly strain

KW - InGaAs

KW - Oxide mode

KW - VCSEL

UR - http://www.scopus.com/inward/record.url?scp=21044436420&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2005.03.011

DO - 10.1016/j.mseb.2005.03.011

M3 - Article

AN - SCOPUS:21044436420

SN - 0921-5107

VL - 121

SP - 60

EP - 63

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-2

ER -

Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

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Keywords

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