Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe

W. C. Chen; Y. K. Su; R. W. Chuang; Hsin-Chieh Yu; M. C. Tsai; K. Y. Cheng; J. B. Horng; C. Hu; Seth Tsau

doi:10.1109/LPT.2007.913745

Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe

W. C. Chen, Y. K. Su, R. W. Chuang, Hsin-Chieh Yu, M. C. Tsai, K. Y. Cheng, J. B. Horng, C. Hu, Seth Tsau

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

Original language	English
Pages (from-to)	264-266
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	20
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2007.913745
State	Published - 15 Feb 2008

Keywords

InGaAs
lasers
metal-organic vapor phase epi-taxy (MOVPE)
photoluminescence (PL)

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10.1109/LPT.2007.913745

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title = "Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe",

abstract = "In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.",

keywords = "InGaAs, lasers, metal-organic vapor phase epi-taxy (MOVPE), photoluminescence (PL)",

author = "Chen, {W. C.} and Su, {Y. K.} and Chuang, {R. W.} and Hsin-Chieh Yu and Tsai, {M. C.} and Cheng, {K. Y.} and Horng, {J. B.} and C. Hu and Seth Tsau",

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doi = "10.1109/LPT.2007.913745",

language = "English",

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pages = "264--266",

journal = "IEEE Photonics Technology Letters",

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TY - JOUR

T1 - Highly Strained 1

T2 - 22-μM Ingaas Lasers Grown By Movpe

AU - Chen, W. C.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Yu, Hsin-Chieh

AU - Tsai, M. C.

AU - Cheng, K. Y.

AU - Horng, J. B.

AU - Hu, C.

AU - Tsau, Seth

PY - 2008/2/15

Y1 - 2008/2/15

N2 - In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

AB - In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

KW - InGaAs

KW - lasers

KW - metal-organic vapor phase epi-taxy (MOVPE)

KW - photoluminescence (PL)

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DO - 10.1109/LPT.2007.913745

M3 - Article

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VL - 20

SP - 264

EP - 266

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 4

ER -

Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe

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Keywords

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