Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

Ke Hua Su, Wei Chou Hsu*, Ching Sung Lee, Po Jung Hu, Ru Shang Hsiao, Jenn-Fang Chen, Tung Wei Chi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.

Original languageEnglish
Pages (from-to)2344-2347
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
StatePublished - 24 Apr 2007

Keywords

  • Dilute channel
  • InGaAsNSb/GaAs HEMT
  • Surfactant

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