Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

Ke Hua Su; Wei Chou Hsu; Ching Sung Lee; Po Jung Hu; Ru Shang Hsiao; Jenn-Fang Chen; Tung Wei Chi

doi:10.1143/JJAP.46.2344

Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor

Ke Hua Su, Wei Chou Hsu^*, Ching Sung Lee, Po Jung Hu, Ru Shang Hsiao, Jenn-Fang Chen, Tung Wei Chi

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A novel In_0.3Ga_0.7As_0.99N _0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V _th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In_0.3 Ga_0.7As_0.99N_0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (g_m,max) of 94 (109)mS/mm at 450 (300)K.

Original language	English
Pages (from-to)	2344-2347
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2344
State	Published - 24 Apr 2007

Keywords

Dilute channel
InGaAsNSb/GaAs HEMT
Surfactant

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10.1143/JJAP.46.2344

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title = "Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor",

abstract = "A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.",

keywords = "Dilute channel, InGaAsNSb/GaAs HEMT, Surfactant",

author = "Su, {Ke Hua} and Hsu, {Wei Chou} and Lee, {Ching Sung} and Hu, {Po Jung} and Hsiao, {Ru Shang} and Jenn-Fang Chen and Chi, {Tung Wei}",

year = "2007",

month = apr,

day = "24",

doi = "10.1143/JJAP.46.2344",

language = "English",

volume = "46",

pages = "2344--2347",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor. / Su, Ke Hua; Hsu, Wei Chou; Lee, Ching Sung et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, 24.04.2007, p. 2344-2347.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

AU - Su, Ke Hua

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Hu, Po Jung

AU - Hsiao, Ru Shang

AU - Chen, Jenn-Fang

AU - Chi, Tung Wei

PY - 2007/4/24

Y1 - 2007/4/24

N2 - A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.

AB - A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.

KW - Dilute channel

KW - InGaAsNSb/GaAs HEMT

KW - Surfactant

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DO - 10.1143/JJAP.46.2344

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VL - 46

SP - 2344

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor

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