Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics

Yan Kui Liang; Wei Li Li; Jun Yang Zheng; Yu Lon Lin; Yu Cheng Lu; Ching Hua Chiu; Dong Ru Hsieh; Tsung Te Chou; Chi Chung Kei; Huai Ying Huang; Yu Ming Lin; Yuan-Chieh Tseng; Tien-Sheng Chao; Edward Yi Chang; Chun Hsiung Lin

doi:10.1109/LED.2023.3310614

Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics

Yan Kui Liang, Wei Li Li, Jun Yang Zheng, Yu Lon Lin, Yu Cheng Lu, Ching Hua Chiu, Dong Ru Hsieh, Tsung Te Chou, Chi Chung Kei, Huai Ying Huang, Yu Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun Hsiung Lin

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The high-performance atomic layer deposited (ALD) ultrathin (~2 nm) amorphous InZnO (α-IZO, indium: Zinc ≈ 6:4) channel thin-film transistors (TFTs) with a short channel length (Lch) of 50 nm were presented. Furthermore, the gate stability was evaluated using temperature-dependent positive-bias stress (PBS) tests for the IZO TFTs up to 3.5 MV/cm. The short channel TFTs exhibited excellent electrical characteristics, with high Ion exceeding 360 uA/um (@VG= 2V), and an optimized threshold voltage (Vth) of ~ 0.11 V. In particular, the ultra-low drain-induced barrier lowering (DIBL) performance of 16 mV/V was presented and matched with technology computer aided design (TCAD) estimation. The activation energy of device degradation was extracted to better understand the mechanism. The extracted high field effect channel mobility (μFE) of 43.6 cm2/V-s in conjunction with the low Vth shifts of 12.4 mV (@ 3.5 MV/cm; Vth+2V) for 5000s PBS test at 25 °C exhibited the excellent performances combining channel mobility and gate stability reported for oxide semiconductor TFT.

Original language	English
Pages (from-to)	1
Number of pages	1
Journal	Ieee Electron Device Letters
DOIs	https://doi.org/10.1109/LED.2023.3310614
State	Accepted/In press - 2023

Keywords

Atomic layer deposition
DIBL
Dielectrics
Hafnium oxide
high mobility
indium zinc oxide
InZnO TFTs
Iron
Logic gates
oxygen annealing
positive-bias stress
stability
Thermal stability
Thin film transistors
thin-film transistors
Transistors

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10.1109/LED.2023.3310614

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Liang, Y. K., Li, W. L., Zheng, J. Y., Lin, Y. L., Lu, Y. C., Chiu, C. H., Hsieh, D. R., Chou, T. T., Kei, C. C., Huang, H. Y., Lin, Y. M., Tseng, Y.-C., Chao, T.-S., Chang, E. Y., & Lin, C. H. (Accepted/In press). Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics. Ieee Electron Device Letters, 1. https://doi.org/10.1109/LED.2023.3310614

@article{14648404b2e0468d915ffdc66694fcca,

title = "Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics",

abstract = "The high-performance atomic layer deposited (ALD) ultrathin (~2 nm) amorphous InZnO (α-IZO, indium: Zinc ≈ 6:4) channel thin-film transistors (TFTs) with a short channel length (Lch) of 50 nm were presented. Furthermore, the gate stability was evaluated using temperature-dependent positive-bias stress (PBS) tests for the IZO TFTs up to 3.5 MV/cm. The short channel TFTs exhibited excellent electrical characteristics, with high Ion exceeding 360 uA/um (@VG= 2V), and an optimized threshold voltage (Vth) of ~ 0.11 V. In particular, the ultra-low drain-induced barrier lowering (DIBL) performance of 16 mV/V was presented and matched with technology computer aided design (TCAD) estimation. The activation energy of device degradation was extracted to better understand the mechanism. The extracted high field effect channel mobility (μFE) of 43.6 cm2/V-s in conjunction with the low Vth shifts of 12.4 mV (@ 3.5 MV/cm; Vth+2V) for 5000s PBS test at 25 °C exhibited the excellent performances combining channel mobility and gate stability reported for oxide semiconductor TFT.",

keywords = "Atomic layer deposition, DIBL, Dielectrics, Hafnium oxide, high mobility, indium zinc oxide, InZnO TFTs, Iron, Logic gates, oxygen annealing, positive-bias stress, stability, Thermal stability, Thin film transistors, thin-film transistors, Transistors",

author = "Liang, {Yan Kui} and Li, {Wei Li} and Zheng, {Jun Yang} and Lin, {Yu Lon} and Lu, {Yu Cheng} and Chiu, {Ching Hua} and Hsieh, {Dong Ru} and Chou, {Tsung Te} and Kei, {Chi Chung} and Huang, {Huai Ying} and Lin, {Yu Ming} and Yuan-Chieh Tseng and Tien-Sheng Chao and Chang, {Edward Yi} and Lin, {Chun Hsiung}",

note = "Publisher Copyright: IEEE",

year = "2023",

doi = "10.1109/LED.2023.3310614",

language = "English",

pages = "1",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Liang, YK, Li, WL, Zheng, JY, Lin, YL, Lu, YC, Chiu, CH, Hsieh, DR, Chou, TT, Kei, CC, Huang, HY, Lin, YM, Tseng, Y-C , Chao, T-S , Chang, EY & Lin, CH 2023, 'Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics', Ieee Electron Device Letters, pp. 1. https://doi.org/10.1109/LED.2023.3310614

TY - JOUR

T1 - Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics

AU - Liang, Yan Kui

AU - Li, Wei Li

AU - Zheng, Jun Yang

AU - Lin, Yu Lon

AU - Lu, Yu Cheng

AU - Chiu, Ching Hua

AU - Hsieh, Dong Ru

AU - Chou, Tsung Te

AU - Kei, Chi Chung

AU - Huang, Huai Ying

AU - Lin, Yu Ming

AU - Tseng, Yuan-Chieh

AU - Chao, Tien-Sheng

AU - Chang, Edward Yi

AU - Lin, Chun Hsiung

N1 - Publisher Copyright: IEEE

PY - 2023

Y1 - 2023

N2 - The high-performance atomic layer deposited (ALD) ultrathin (~2 nm) amorphous InZnO (α-IZO, indium: Zinc ≈ 6:4) channel thin-film transistors (TFTs) with a short channel length (Lch) of 50 nm were presented. Furthermore, the gate stability was evaluated using temperature-dependent positive-bias stress (PBS) tests for the IZO TFTs up to 3.5 MV/cm. The short channel TFTs exhibited excellent electrical characteristics, with high Ion exceeding 360 uA/um (@VG= 2V), and an optimized threshold voltage (Vth) of ~ 0.11 V. In particular, the ultra-low drain-induced barrier lowering (DIBL) performance of 16 mV/V was presented and matched with technology computer aided design (TCAD) estimation. The activation energy of device degradation was extracted to better understand the mechanism. The extracted high field effect channel mobility (μFE) of 43.6 cm2/V-s in conjunction with the low Vth shifts of 12.4 mV (@ 3.5 MV/cm; Vth+2V) for 5000s PBS test at 25 °C exhibited the excellent performances combining channel mobility and gate stability reported for oxide semiconductor TFT.

AB - The high-performance atomic layer deposited (ALD) ultrathin (~2 nm) amorphous InZnO (α-IZO, indium: Zinc ≈ 6:4) channel thin-film transistors (TFTs) with a short channel length (Lch) of 50 nm were presented. Furthermore, the gate stability was evaluated using temperature-dependent positive-bias stress (PBS) tests for the IZO TFTs up to 3.5 MV/cm. The short channel TFTs exhibited excellent electrical characteristics, with high Ion exceeding 360 uA/um (@VG= 2V), and an optimized threshold voltage (Vth) of ~ 0.11 V. In particular, the ultra-low drain-induced barrier lowering (DIBL) performance of 16 mV/V was presented and matched with technology computer aided design (TCAD) estimation. The activation energy of device degradation was extracted to better understand the mechanism. The extracted high field effect channel mobility (μFE) of 43.6 cm2/V-s in conjunction with the low Vth shifts of 12.4 mV (@ 3.5 MV/cm; Vth+2V) for 5000s PBS test at 25 °C exhibited the excellent performances combining channel mobility and gate stability reported for oxide semiconductor TFT.

KW - Atomic layer deposition

KW - DIBL

KW - Dielectrics

KW - Hafnium oxide

KW - high mobility

KW - indium zinc oxide

KW - InZnO TFTs

KW - Iron

KW - Logic gates

KW - oxygen annealing

KW - positive-bias stress

KW - stability

KW - Thermal stability

KW - Thin film transistors

KW - thin-film transistors

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=85169696857&partnerID=8YFLogxK

U2 - 10.1109/LED.2023.3310614

DO - 10.1109/LED.2023.3310614

M3 - Article

AN - SCOPUS:85169696857

SN - 0741-3106

SP - 1

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

ER -

Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics

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Keywords

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