Highly sensitivity of potassium ion detection realized on fluorinated-HfO2 by fluorine implantation on EIS

Kuan I. Ho, Tseng Fu Lu, Meng Cin Su, Jer Chyi Wang, Chia Ming Yang, Dorota G. Pijanswska, Chao Sung Lai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

In this article, the development of a potassium ion sensor based on the fluorinated-HfO2 using fluorine (F19+) ion implantation on Electrolyte-Insulator-Semiconductor (EIS) structure is proposed. To concentrate the F atom within a shallow region on HfO2 sensing membrane surface, relatively low implant power and big tilt angle are chosen. With suitable F19+ implant dosage, the pK sensitivity can be effectively improved from 18.19 to 112 mV/pK, and relatively low drift coefficient of 2.62 mV/h is also achieved in 10 mM potassium electrolyte. To investigate the surface roughness and the fluorine depth profile of the implanted-HfO2 films, physics analysis including AFM and XPS are both performed.

Original languageEnglish
Title of host publication2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages2110-2113
Number of pages4
DOIs
StatePublished - 2011
Event2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China
Duration: 5 Jun 20119 Jun 2011

Publication series

Name2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country/TerritoryChina
CityBeijing
Period5/06/119/06/11

Keywords

  • Electrolyte-insulator-semiconductor (EIS)
  • fluorine implantation
  • hafnium dioxide (HfO)
  • hydrogen ion (H)
  • potassium ion (K)

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