Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel

Yan Kui Liang; Jun Yang Zheng; Yu Lon Lin; Yu Cheng Lu; Dong Ru Hsieh; Tsung Te Chou; Chi Chung Kei; Huai Ying Huang; Yu Ming Lin; Yuan Chieh Tseng; Tien Sheng Chao; Edward Yi Chang; Kasidit Toprasertpong; Shinichi Takagi; Chun Hsiung Lin

doi:10.1109/TED.2024.3385395

Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel

Yan Kui Liang^*, Jun Yang Zheng, Yu Lon Lin, Yu Cheng Lu, Dong Ru Hsieh, Tsung Te Chou, Chi Chung Kei, Huai Ying Huang, Yu Ming Lin, Yuan Chieh Tseng, Tien Sheng Chao, Edward Yi Chang, Kasidit Toprasertpong, Shinichi Takagi, Chun Hsiung Lin^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this article, we have demonstrated the utilization of innovative atomic-layer-deposited (ALD) ultrathin (1.8 nm) amorphous InSnZnO (α -ITZO) channel material in the development of a back-end-of-line (BEOL) compatible thin film transistor (TFT). Through the optimization of the indium/tin/zinc (In/Sn/Zn) ratio, the bottom gate (BG) TFT with In_0.83Sn_0.11Zn_0.06O channel and the channel length (L_ch) of 40 nm demonstrates remarkable performances, including positive threshold voltage (V_th) of 0.38 V, excellent subthreshold swing (SS) value of 66.4 mV/dec, high field-effect mobility (μ FE) of 48 cm²/V-s, maximum ON-state current density (I_ON) of 686μ Aμ m at V_DS = 2 V (@V_G = 4 V), and extremely low drain-induced barrier lowering (DIBL) performance of 22 mV/V. Furthermore, the excellent stabilities of the α -ITZO TFT were shown by negative bias stress (NBS) and positive bias stress (PBS) under VG of (V_th± 3 V), and V_th shift (Δ V_th ) of -40 and 60 mV (L_ch = 700 nm) after 3600 s was exhibited. We also simulated the current gain cutoff frequency (f_T) by technology computer-aided design (TCAD) simulation to further investigate the potential of radio frequency (RF) applications. These results establish a competitive standard for TFTs based on quaternary ultrathin (T_ch < 5 nm) amorphous oxide semiconductors (AOSs).

Original language	English
Pages (from-to)	3671-3677
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	71
Issue number	6
DOIs	https://doi.org/10.1109/TED.2024.3385395
State	Published - 1 Jun 2024

Keywords

Atomic layer deposition
drain-induced barrier lowering (DIBL)
enhancement-mode
high mobility
InSnZnO thin film transistors (TFTs)
radio frequency (RF) application
reliability
stability
TFTs

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10.1109/TED.2024.3385395

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Liang, Y. K., Zheng, J. Y., Lin, Y. L., Lu, Y. C., Hsieh, D. R., Chou, T. T., Kei, C. C., Huang, H. Y., Lin, Y. M., Tseng, Y. C., Chao, T. S., Chang, E. Y., Toprasertpong, K., Takagi, S., & Lin, C. H. (2024). Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel. IEEE Transactions on Electron Devices, 71(6), 3671-3677. https://doi.org/10.1109/TED.2024.3385395

@article{2372bf31e00c497abfba7309e55ed9d6,

title = "Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel",

abstract = "In this article, we have demonstrated the utilization of innovative atomic-layer-deposited (ALD) ultrathin (1.8 nm) amorphous InSnZnO (α -ITZO) channel material in the development of a back-end-of-line (BEOL) compatible thin film transistor (TFT). Through the optimization of the indium/tin/zinc (In/Sn/Zn) ratio, the bottom gate (BG) TFT with In0.83Sn0.11Zn0.06O channel and the channel length (Lch) of 40 nm demonstrates remarkable performances, including positive threshold voltage (Vth) of 0.38 V, excellent subthreshold swing (SS) value of 66.4 mV/dec, high field-effect mobility (μ FE) of 48 cm2/V-s, maximum ON-state current density (ION) of 686μ Aμ m at VDS = 2 V (@VG = 4 V), and extremely low drain-induced barrier lowering (DIBL) performance of 22 mV/V. Furthermore, the excellent stabilities of the α -ITZO TFT were shown by negative bias stress (NBS) and positive bias stress (PBS) under VG of (Vth± 3 V), and Vth shift (Δ Vth ) of -40 and 60 mV (Lch = 700 nm) after 3600 s was exhibited. We also simulated the current gain cutoff frequency (fT) by technology computer-aided design (TCAD) simulation to further investigate the potential of radio frequency (RF) applications. These results establish a competitive standard for TFTs based on quaternary ultrathin (Tch < 5 nm) amorphous oxide semiconductors (AOSs).",

keywords = "Atomic layer deposition, drain-induced barrier lowering (DIBL), enhancement-mode, high mobility, InSnZnO thin film transistors (TFTs), radio frequency (RF) application, reliability, stability, TFTs",

author = "Liang, {Yan Kui} and Zheng, {Jun Yang} and Lin, {Yu Lon} and Lu, {Yu Cheng} and Hsieh, {Dong Ru} and Chou, {Tsung Te} and Kei, {Chi Chung} and Huang, {Huai Ying} and Lin, {Yu Ming} and Tseng, {Yuan Chieh} and Chao, {Tien Sheng} and Chang, {Edward Yi} and Kasidit Toprasertpong and Shinichi Takagi and Lin, {Chun Hsiung}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2024",

month = jun,

day = "1",

doi = "10.1109/TED.2024.3385395",

language = "English",

volume = "71",

pages = "3671--3677",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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Liang, YK, Zheng, JY, Lin, YL, Lu, YC, Hsieh, DR, Chou, TT, Kei, CC, Huang, HY, Lin, YM, Tseng, YC , Chao, TS , Chang, EY, Toprasertpong, K, Takagi, S & Lin, CH 2024, 'Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel', IEEE Transactions on Electron Devices, vol. 71, no. 6, pp. 3671-3677. https://doi.org/10.1109/TED.2024.3385395

TY - JOUR

T1 - Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel

AU - Liang, Yan Kui

AU - Zheng, Jun Yang

AU - Lin, Yu Lon

AU - Lu, Yu Cheng

AU - Hsieh, Dong Ru

AU - Chou, Tsung Te

AU - Kei, Chi Chung

AU - Huang, Huai Ying

AU - Lin, Yu Ming

AU - Tseng, Yuan Chieh

AU - Chao, Tien Sheng

AU - Chang, Edward Yi

AU - Toprasertpong, Kasidit

AU - Takagi, Shinichi

AU - Lin, Chun Hsiung

PY - 2024/6/1

Y1 - 2024/6/1

N2 - In this article, we have demonstrated the utilization of innovative atomic-layer-deposited (ALD) ultrathin (1.8 nm) amorphous InSnZnO (α -ITZO) channel material in the development of a back-end-of-line (BEOL) compatible thin film transistor (TFT). Through the optimization of the indium/tin/zinc (In/Sn/Zn) ratio, the bottom gate (BG) TFT with In0.83Sn0.11Zn0.06O channel and the channel length (Lch) of 40 nm demonstrates remarkable performances, including positive threshold voltage (Vth) of 0.38 V, excellent subthreshold swing (SS) value of 66.4 mV/dec, high field-effect mobility (μ FE) of 48 cm2/V-s, maximum ON-state current density (ION) of 686μ Aμ m at VDS = 2 V (@VG = 4 V), and extremely low drain-induced barrier lowering (DIBL) performance of 22 mV/V. Furthermore, the excellent stabilities of the α -ITZO TFT were shown by negative bias stress (NBS) and positive bias stress (PBS) under VG of (Vth± 3 V), and Vth shift (Δ Vth ) of -40 and 60 mV (Lch = 700 nm) after 3600 s was exhibited. We also simulated the current gain cutoff frequency (fT) by technology computer-aided design (TCAD) simulation to further investigate the potential of radio frequency (RF) applications. These results establish a competitive standard for TFTs based on quaternary ultrathin (Tch < 5 nm) amorphous oxide semiconductors (AOSs).

AB - In this article, we have demonstrated the utilization of innovative atomic-layer-deposited (ALD) ultrathin (1.8 nm) amorphous InSnZnO (α -ITZO) channel material in the development of a back-end-of-line (BEOL) compatible thin film transistor (TFT). Through the optimization of the indium/tin/zinc (In/Sn/Zn) ratio, the bottom gate (BG) TFT with In0.83Sn0.11Zn0.06O channel and the channel length (Lch) of 40 nm demonstrates remarkable performances, including positive threshold voltage (Vth) of 0.38 V, excellent subthreshold swing (SS) value of 66.4 mV/dec, high field-effect mobility (μ FE) of 48 cm2/V-s, maximum ON-state current density (ION) of 686μ Aμ m at VDS = 2 V (@VG = 4 V), and extremely low drain-induced barrier lowering (DIBL) performance of 22 mV/V. Furthermore, the excellent stabilities of the α -ITZO TFT were shown by negative bias stress (NBS) and positive bias stress (PBS) under VG of (Vth± 3 V), and Vth shift (Δ Vth ) of -40 and 60 mV (Lch = 700 nm) after 3600 s was exhibited. We also simulated the current gain cutoff frequency (fT) by technology computer-aided design (TCAD) simulation to further investigate the potential of radio frequency (RF) applications. These results establish a competitive standard for TFTs based on quaternary ultrathin (Tch < 5 nm) amorphous oxide semiconductors (AOSs).

KW - Atomic layer deposition

KW - drain-induced barrier lowering (DIBL)

KW - enhancement-mode

KW - high mobility

KW - InSnZnO thin film transistors (TFTs)

KW - radio frequency (RF) application

KW - reliability

KW - stability

KW - TFTs

UR - http://www.scopus.com/inward/record.url?scp=85190169730&partnerID=8YFLogxK

U2 - 10.1109/TED.2024.3385395

DO - 10.1109/TED.2024.3385395

M3 - Article

AN - SCOPUS:85190169730

SN - 0018-9383

VL - 71

SP - 3671

EP - 3677

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium-Tin-Zinc-Oxide Channel

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Keywords

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