Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

Po-Tsun Liu; Dun Bao Ruan; Xiu Yun Yeh; Yu Chuan Chiu; Guang Ting Zheng; Simon M. Sze

doi:10.1038/s41598-018-26580-5

Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

Po-Tsun Liu^*, Dun Bao Ruan, Xiu Yun Yeh, Yu Chuan Chiu, Guang Ting Zheng, Simon M. Sze

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (sim;10⁵) under the blue light illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT.

Original language	English
Article number	8153
Journal	Scientific reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-26580-5
State	Published - 1 Dec 2018

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title = "Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture",

abstract = "A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (sim;105) under the blue light illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT.",

author = "Po-Tsun Liu and Ruan, {Dun Bao} and Yeh, {Xiu Yun} and Chiu, {Yu Chuan} and Zheng, {Guang Ting} and Sze, {Simon M.}",

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AU - Chiu, Yu Chuan

AU - Zheng, Guang Ting

AU - Sze, Simon M.

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N2 - A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (sim;105) under the blue light illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT.

AB - A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (sim;105) under the blue light illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT.

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Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

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