Highly Reliable, Scalable, and High-Yield HfZrOxFRAM by Barrier Layer Engineering and Post-Metal Annealing

Yu De Lin; Po Chun Yeh; Jheng Yang Dai; Jian Wei Su; Hsin Hui Huang; Chen Yi Cho; Ying Tsan Tang; Tuo Hung Hou; Shyh Shyuan Sheu; Wei Chung Lo; Shih Chieh Chang

doi:10.1109/IEDM45625.2022.10019561

Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing

Yu De Lin^*, Po Chun Yeh, Jheng Yang Dai, Jian Wei Su, Hsin Hui Huang, Chen Yi Cho, Ying Tsan Tang, Tuo Hung Hou, Shyh Shyuan Sheu, Wei Chung Lo, Shih Chieh Chang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.

Original language	English
Title of host publication	2022 International Electron Devices Meeting, IEDM 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3211-3214
Number of pages	4
ISBN (Electronic)	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019561
State	Published - 2022
Event	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States Duration: 3 Dec 2022 → 7 Dec 2022

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2022-December
ISSN (Print)	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
Country/Territory	United States
City	San Francisco
Period	3/12/22 → 7/12/22

Access to Document

10.1109/IEDM45625.2022.10019561

Cite this

Lin, Y. D., Yeh, P. C., Dai, J. Y., Su, J. W., Huang, H. H., Cho, C. Y., Tang, Y. T., Hou, T. H., Sheu, S. S., Lo, W. C., & Chang, S. C. (2022). Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing. In 2022 International Electron Devices Meeting, IEDM 2022 (pp. 3211-3214). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019561

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title = "Highly Reliable, Scalable, and High-Yield HfZrOxFRAM by Barrier Layer Engineering and Post-Metal Annealing",

abstract = "A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.",

author = "Lin, {Yu De} and Yeh, {Po Chun} and Dai, {Jheng Yang} and Su, {Jian Wei} and Huang, {Hsin Hui} and Cho, {Chen Yi} and Tang, {Ying Tsan} and Hou, {Tuo Hung} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Chang, {Shih Chieh}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019561",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Lin, YD, Yeh, PC, Dai, JY, Su, JW, Huang, HH, Cho, CY, Tang, YT, Hou, TH, Sheu, SS, Lo, WC & Chang, SC 2022, Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing. in 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2022-December, Institute of Electrical and Electronics Engineers Inc., pp. 3211-3214, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, United States, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019561

Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing. / Lin, Yu De; Yeh, Po Chun; Dai, Jheng Yang et al.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 3211-3214 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2022-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yeh, Po Chun

AU - Dai, Jheng Yang

AU - Su, Jian Wei

AU - Huang, Hsin Hui

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N2 - A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.

AB - A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.

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Lin YD, Yeh PC, Dai JY, Su JW, Huang HH, Cho CY et al. Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing. In 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 3211-3214. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019561