Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

Woei Cherng Wu, Tien-Sheng Chao, Wu Chin Peng, Wen Luh Yang, Jer Chyi Wang, Jian Hao Chen, Chao Sung Lai, Tsung Yu Yang, Chien Hsing Lee, Tsung Min Hsieh, Jhyy Cheng Liou

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 μs/5 ms) and low programming current (3.5 μA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (> 150 °C) and good endurance (> 104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application.

Original languageEnglish
Pages (from-to)214-216
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number3
DOIs
StatePublished - 7 Mar 2007

Keywords

  • Multilevel operation
  • source-side injection
  • wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS)

Fingerprint

Dive into the research topics of 'Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory'. Together they form a unique fingerprint.

Cite this