Highly reliable MA BE-SONOS (Metal-Al2O3 Bandgap Engineered SONOS) using a SiO2 buffer layer

Sheng Chih Lai; Hang Ting Lue; Chien Wei Liao; Tai Bor Wu; Ming Jui Yang; Yi Hsien Lue; Jung Yu Hsieh; Szu Yu Wang; Guang Li Luo; Chao-Hsin Chien; Kuang Yeu Hsieh; Rich Liu; Chih Yuan Lu

doi:10.1109/VTSA.2008.4530797

Highly reliable MA BE-SONOS (Metal-Al₂O₃ Bandgap Engineered SONOS) using a SiO₂ buffer layer

Sheng Chih Lai^*, Hang Ting Lue, Chien Wei Liao, Tai Bor Wu, Ming Jui Yang, Yi Hsien Lue, Jung Yu Hsieh, Szu Yu Wang, Guang Li Luo, Chao-Hsin Chien, Kuang Yeu Hsieh, Rich Liu, Chih Yuan Lu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A Metal-high-K Bandgap-Engineered SONOS (MA BE-SONOS) with an additional SiO₂ buffer layer is proposed. The thin SiO₂ (5-6 nm) layer between the high-K (Al₂O₃) and nitride serves to prevent shallow trap generation. Contrary to the previously proposed MANOS or MA BE-SONOS devices using a simple high-k top dielectric, this composite structure eliminates the unstable high-K/nitride interface. Experimental results show that this new device can well suppress the erase saturation, just like MANOS. On the other hand, the data retention is greatly improved, owing to the much more stable interface between the nitride-trapping layer and top oxide. Very large memory window (> 7V) with excellent cycling endurance, read disturb immunity, and data retention has been successfully demonstrated. Theoretical model is also proposed to explain the principle of this device.

Original language	English
Title of host publication	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages	58-59
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530797
State	Published - 14 Aug 2008
Event	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 21 Apr 2008 → 23 Apr 2008

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	21/04/08 → 23/04/08

Access to Document

10.1109/VTSA.2008.4530797

Cite this

Lai, S. C., Lue, H. T., Liao, C. W., Wu, T. B., Yang, M. J., Lue, Y. H., Hsieh, J. Y., Wang, S. Y., Luo, G. L., Chien, C.-H., Hsieh, K. Y., Liu, R., & Lu, C. Y. (2008). Highly reliable MA BE-SONOS (Metal-Al₂O₃ Bandgap Engineered SONOS) using a SiO₂ buffer layer. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 58-59). Article 4530797 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530797

@inproceedings{7911c1d008ae4c228eb9b73cbf30b76a,

title = "Highly reliable MA BE-SONOS (Metal-Al2O3 Bandgap Engineered SONOS) using a SiO2 buffer layer",

abstract = "A Metal-high-K Bandgap-Engineered SONOS (MA BE-SONOS) with an additional SiO2 buffer layer is proposed. The thin SiO2 (5-6 nm) layer between the high-K (Al2O3) and nitride serves to prevent shallow trap generation. Contrary to the previously proposed MANOS or MA BE-SONOS devices using a simple high-k top dielectric, this composite structure eliminates the unstable high-K/nitride interface. Experimental results show that this new device can well suppress the erase saturation, just like MANOS. On the other hand, the data retention is greatly improved, owing to the much more stable interface between the nitride-trapping layer and top oxide. Very large memory window (> 7V) with excellent cycling endurance, read disturb immunity, and data retention has been successfully demonstrated. Theoretical model is also proposed to explain the principle of this device.",

author = "Lai, {Sheng Chih} and Lue, {Hang Ting} and Liao, {Chien Wei} and Wu, {Tai Bor} and Yang, {Ming Jui} and Lue, {Yi Hsien} and Hsieh, {Jung Yu} and Wang, {Szu Yu} and Luo, {Guang Li} and Chao-Hsin Chien and Hsieh, {Kuang Yeu} and Rich Liu and Lu, {Chih Yuan}",

year = "2008",

month = aug,

day = "14",

doi = "10.1109/VTSA.2008.4530797",

language = "English",

isbn = "9781424416158",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "58--59",

booktitle = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA",

note = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 21-04-2008 Through 23-04-2008",

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Lai, SC, Lue, HT, Liao, CW, Wu, TB, Yang, MJ, Lue, YH, Hsieh, JY, Wang, SY, Luo, GL, Chien, C-H, Hsieh, KY, Liu, R & Lu, CY 2008, Highly reliable MA BE-SONOS (Metal-Al₂O₃ Bandgap Engineered SONOS) using a SiO₂ buffer layer. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530797, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 58-59, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, 21/04/08. https://doi.org/10.1109/VTSA.2008.4530797

Highly reliable MA BE-SONOS (Metal-Al₂O₃ Bandgap Engineered SONOS) using a SiO₂ buffer layer. / Lai, Sheng Chih; Lue, Hang Ting; Liao, Chien Wei et al.
2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 58-59 4530797 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Highly reliable MA BE-SONOS (Metal-Al2O3 Bandgap Engineered SONOS) using a SiO2 buffer layer

AU - Lai, Sheng Chih

AU - Lue, Hang Ting

AU - Liao, Chien Wei

AU - Wu, Tai Bor

AU - Yang, Ming Jui

AU - Lue, Yi Hsien

AU - Hsieh, Jung Yu

AU - Wang, Szu Yu

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

AU - Hsieh, Kuang Yeu

AU - Liu, Rich

AU - Lu, Chih Yuan

PY - 2008/8/14

Y1 - 2008/8/14

N2 - A Metal-high-K Bandgap-Engineered SONOS (MA BE-SONOS) with an additional SiO2 buffer layer is proposed. The thin SiO2 (5-6 nm) layer between the high-K (Al2O3) and nitride serves to prevent shallow trap generation. Contrary to the previously proposed MANOS or MA BE-SONOS devices using a simple high-k top dielectric, this composite structure eliminates the unstable high-K/nitride interface. Experimental results show that this new device can well suppress the erase saturation, just like MANOS. On the other hand, the data retention is greatly improved, owing to the much more stable interface between the nitride-trapping layer and top oxide. Very large memory window (> 7V) with excellent cycling endurance, read disturb immunity, and data retention has been successfully demonstrated. Theoretical model is also proposed to explain the principle of this device.

AB - A Metal-high-K Bandgap-Engineered SONOS (MA BE-SONOS) with an additional SiO2 buffer layer is proposed. The thin SiO2 (5-6 nm) layer between the high-K (Al2O3) and nitride serves to prevent shallow trap generation. Contrary to the previously proposed MANOS or MA BE-SONOS devices using a simple high-k top dielectric, this composite structure eliminates the unstable high-K/nitride interface. Experimental results show that this new device can well suppress the erase saturation, just like MANOS. On the other hand, the data retention is greatly improved, owing to the much more stable interface between the nitride-trapping layer and top oxide. Very large memory window (> 7V) with excellent cycling endurance, read disturb immunity, and data retention has been successfully demonstrated. Theoretical model is also proposed to explain the principle of this device.

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U2 - 10.1109/VTSA.2008.4530797

DO - 10.1109/VTSA.2008.4530797

M3 - Conference contribution

AN - SCOPUS:49049109829

SN - 9781424416158

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 58

EP - 59

BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

T2 - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 21 April 2008 through 23 April 2008

ER -

Lai SC, Lue HT, Liao CW, Wu TB, Yang MJ, Lue YH et al. Highly reliable MA BE-SONOS (Metal-Al₂O₃ Bandgap Engineered SONOS) using a SiO₂ buffer layer. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 58-59. 4530797. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2008.4530797