Abstract
An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25™ silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.
Original language | English |
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Pages (from-to) | 1212-1218 |
Number of pages | 7 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 4 |
DOIs | |
State | Published - 1 Jul 2001 |
Event | 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: 15 Oct 2000 → 18 Oct 2000 |