Highly reliable amorphous Si TFT with low leakage for AMLCD and AMOLED applications

Chi Wen Chen; Tseung-Yuen Tseng; Ting Chang Chang; Kao Cheng Wang; Chen Shuo Huang; Chia Chun Ling; Po-Tsun Liu; Hau Yan Lu

doi:10.1889/1.2036424

Highly reliable amorphous Si TFT with low leakage for AMLCD and AMOLED applications

Chi Wen Chen^*, Tseung-Yuen Tseng, Ting Chang Chang, Kao Cheng Wang, Chen Shuo Huang, Chia Chun Ling, Po-Tsun Liu, Hau Yan Lu

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed in this work. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm ² /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology.

Original language	English
Article number	P-15
Pages (from-to)	280-283
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	36
Issue number	1
DOIs	https://doi.org/10.1889/1.2036424
State	Published - 1 Jan 2005
Event	SID Symposium Digest of Technical Papers - Boston, MA, United States Duration: 29 Jul 2004 → 29 Jul 2004

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title = "Highly reliable amorphous Si TFT with low leakage for AMLCD and AMOLED applications",

abstract = " A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed in this work. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm 2 /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology.",

author = "Chen, {Chi Wen} and Tseung-Yuen Tseng and Chang, {Ting Chang} and Wang, {Kao Cheng} and Huang, {Chen Shuo} and Ling, {Chia Chun} and Po-Tsun Liu and Lu, {Hau Yan}",

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T1 - Highly reliable amorphous Si TFT with low leakage for AMLCD and AMOLED applications

AU - Chen, Chi Wen

AU - Tseng, Tseung-Yuen

AU - Chang, Ting Chang

AU - Wang, Kao Cheng

AU - Huang, Chen Shuo

AU - Ling, Chia Chun

AU - Liu, Po-Tsun

AU - Lu, Hau Yan

PY - 2005/1/1

Y1 - 2005/1/1

N2 - A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed in this work. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm 2 /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology.

AB - A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed in this work. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm 2 /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology.

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Y2 - 29 July 2004 through 29 July 2004

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Highly reliable amorphous Si TFT with low leakage for AMLCD and AMOLED applications

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