Highly power efficient organic light-emitting diodes with a p-doping layer

Chan Ching Chang; Ming Ta Hsieh; Jenn-Fang Chen; Shiao Wen Hwang; Chin H. Chen

doi:10.1063/1.2405856

Highly power efficient organic light-emitting diodes with a p-doping layer

Chan Ching Chang, Ming Ta Hsieh^*, Jenn-Fang Chen, Shiao Wen Hwang, Chin H. Chen

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

143 Scopus citations

Abstract

In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p -doped transport layer which comprises tungsten oxide (W O3) and 4, 4′, 4″ -tris (N -(2-naphthyl)- N -phenyl-amino) triphenylamine (2-TNATA) to replace the volatile tetrafluro- tetracyanoquinodimethane. The authors propose the 2-TNATA:W O3 composition functions as a p -doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8- quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lmW) at 100 cd m2.

Original language	English
Article number	253504
Journal	Applied Physics Letters
Volume	89
Issue number	25
DOIs	https://doi.org/10.1063/1.2405856
State	Published - 1 Dec 2006

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abstract = "In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p -doped transport layer which comprises tungsten oxide (W O3) and 4, 4′, 4″ -tris (N -(2-naphthyl)- N -phenyl-amino) triphenylamine (2-TNATA) to replace the volatile tetrafluro- tetracyanoquinodimethane. The authors propose the 2-TNATA:W O3 composition functions as a p -doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8- quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lmW) at 100 cd m2.",

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AU - Chang, Chan Ching

AU - Hsieh, Ming Ta

AU - Chen, Jenn-Fang

AU - Hwang, Shiao Wen

AU - Chen, Chin H.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p -doped transport layer which comprises tungsten oxide (W O3) and 4, 4′, 4″ -tris (N -(2-naphthyl)- N -phenyl-amino) triphenylamine (2-TNATA) to replace the volatile tetrafluro- tetracyanoquinodimethane. The authors propose the 2-TNATA:W O3 composition functions as a p -doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8- quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lmW) at 100 cd m2.

AB - In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p -doped transport layer which comprises tungsten oxide (W O3) and 4, 4′, 4″ -tris (N -(2-naphthyl)- N -phenyl-amino) triphenylamine (2-TNATA) to replace the volatile tetrafluro- tetracyanoquinodimethane. The authors propose the 2-TNATA:W O3 composition functions as a p -doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8- quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lmW) at 100 cd m2.

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Highly power efficient organic light-emitting diodes with a p-doping layer

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