Abstract
We demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4′,4″-tris(N-(2-naphthyl)-N-phenylamino)triphenylamine (2-TNATA) to replace the volatile and low Tg F4-TCNQ. We propose the 2-TNATA:WO 3 composition functions as a p-doping layer which significantly improves holeinjection and conductivity of the Alq3 based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m2.
Original language | English |
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Pages (from-to) | 1106-1109 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 37 |
Issue number | 1 |
DOIs | |
State | Published - 1 Dec 2006 |
Event | 44th International Symposium, Seminar, and Exhibition, SID 2006 - San Francisco, CA, United States Duration: 4 Jun 2006 → 9 Jun 2006 |