Abstract
Hybrid planar solar cells based on bulk n-doped Si wafers and poly (3,4-ethylenedioxythiophene): poly (styrenesulfonate) with a back-junction geometry demonstrated an excellent power conversion efficiency of more than 11%. When a random pyramid or a Si nanowire antireflection structure was incorporated into the front of the cell surface, the power conversion efficiencies were further enhanced to 13.9% or 14.5%, respectively. Moreover, the cells with the Si nanowire antireflection structure displayed omnidirectional light-trapping characteristics over the random pyramid structures. These cells also maintained a constant power conversion efficiency even at an incident angle of 60°.
Original language | English |
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Pages (from-to) | 82-89 |
Number of pages | 8 |
Journal | Organic Electronics |
Volume | 55 |
DOIs | |
State | Published - 1 Apr 2018 |
Keywords
- Anti-reflection
- Hybrid solar cell
- Metal assisted chemical etching
- Nanowire
- Omnidirectional
- PEDOT:PSS
- Random pyramid