Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays

Hung Chuan Liu, Yi Chun Lai, Chih Chung Lai, Bing Shu Wu, Hsiao-Wen Zan*, Pei-Chen Yu, Yu Lun Chueh, Chuang Chuang Tsai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm2/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

Original languageEnglish
Pages (from-to)232-240
Number of pages9
JournalACS Applied Materials and Interfaces
Volume7
Issue number1
DOIs
StatePublished - 14 Jan 2015

Keywords

  • IGZO
  • high mobility
  • oxide TFT
  • silver nanowire

Fingerprint

Dive into the research topics of 'Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays'. Together they form a unique fingerprint.

Cite this