Highly durable and flexible gallium-based oxide conductive-bridging random access memory

Keyphrases

• Budget Process 20%
• Conduction Mechanism 20%
• Conductive Bridging Random Access Memory (CBRAM) 100%
• Electrochemical Metallization 20%
• Electronic Circuit 20%
• Excellent Performance 20%
• Flexibility Test 20%
• Ga2O3 40%
• Gallium 100%
• High Endurance 20%
• Highly Durable 100%
• Highly Flexible 100%
• Integrated Electronics 20%
• Low Temperature Process 20%
• Low Thermal Budget 20%
• Low-voltage Operation 20%
• Memory Device 80%
• Memory Window 40%
• Oxides 100%
• Polyimide Substrate 20%
• Resistance Characteristics 20%
• Retention Memory 20%
• Temperature Coefficient of Resistance 20%

Engineering

• Bridging 100%
• Conductive 100%
• Durables 100%
• Low-Temperature 20%
• Metallizations 20%
• Networks (Circuits) 20%
• Random Access Memory 100%
• Random Access Memory Device 80%
• Resistance Characteristic 20%
• Temperature Coefficient of the Resistance 20%

Material Science

• Electronic Circuit 100%
• Gallium 100%
• Oxide Compound 100%
• Polyimide 100%