Highly (111) textured titanium nitride layers for sub-quarter-micrometer Al metallization

Wen Fa Wu; Chien-Cheng Lin; Chyi Chyuan Huang; Horng-Chih Lin; Ting Chang Chang; Rong Ping Yang; Tiao Yuan Huang

doi:10.1149/1.1390830

Highly (111) textured titanium nitride layers for sub-quarter-micrometer Al metallization

Wen Fa Wu, Chien-Cheng Lin, Chyi Chyuan Huang, Horng-Chih Lin, Ting Chang Chang, Rong Ping Yang, Tiao Yuan Huang

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 μΩ cm, high 〈111〉 preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches.

Original language	English
Pages (from-to)	342-344
Number of pages	3
Journal	Electrochemical and Solid-State Letters
Volume	2
Issue number	7
DOIs	https://doi.org/10.1149/1.1390830
State	Published - Jul 1999

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title = "Highly (111) textured titanium nitride layers for sub-quarter-micrometer Al metallization",

abstract = "Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 μΩ cm, high 〈111〉 preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches.",

author = "Wu, {Wen Fa} and Chien-Cheng Lin and Huang, {Chyi Chyuan} and Horng-Chih Lin and Chang, {Ting Chang} and Yang, {Rong Ping} and Huang, {Tiao Yuan}",

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doi = "10.1149/1.1390830",

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T1 - Highly (111) textured titanium nitride layers for sub-quarter-micrometer Al metallization

AU - Wu, Wen Fa

AU - Lin, Chien-Cheng

AU - Huang, Chyi Chyuan

AU - Lin, Horng-Chih

AU - Chang, Ting Chang

AU - Yang, Rong Ping

AU - Huang, Tiao Yuan

PY - 1999/7

Y1 - 1999/7

N2 - Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 μΩ cm, high 〈111〉 preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches.

AB - Texture improved TiN films were prepared by a two-step deposition process. A thin uncollimated TiN layer is deposited first at low substrate temperature and sputtering power. This layer has poor step coverage and high resistivity, but acts as a crystallographic seed layer for the subsequent collimated TiN layer deposited at high substrate temperature and sputtering power. The TiN layer stack is deposited sequentially without vacuum break. The resulting TiN layer has a low resistivity of 72.25 μΩ cm, high 〈111〉 preferred orientation, and improved bottom coverage in sub-quarter-micrometer contact holes and trenches.

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U2 - 10.1149/1.1390830

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VL - 2

SP - 342

EP - 344

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Highly (111) textured titanium nitride layers for sub-quarter-micrometer Al metallization

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