Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

W. B. Chen; B. S. Shie; Albert Chin; K. C. Hsu; C. C. Chi

doi:10.1109/IEDM.2010.5703385

Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

W. B. Chen, B. S. Shie, Albert Chin, K. C. Hsu, C. C. Chi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (R_s), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm²/Vs high-field (1 MV/cm) mobility and low 37 mV ΔV_t PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n⁺/p junction and 10X better I _ON/I_OFF.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
DOIs	https://doi.org/10.1109/IEDM.2010.5703385
State	Published - 1 Dec 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 6 Dec 2010 → 8 Dec 2010

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	6/12/10 → 8/12/10

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10.1109/IEDM.2010.5703385

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@inproceedings{ab9b9a10a592472a9d941dc2555719a8,

title = "Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing",

abstract = "High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (Rs), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm2/Vs high-field (1 MV/cm) mobility and low 37 mV ΔVt PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n+/p junction and 10X better I ON/IOFF.",

author = "Chen, {W. B.} and Shie, {B. S.} and Albert Chin and Hsu, {K. C.} and Chi, {C. C.}",

year = "2010",

month = dec,

day = "1",

doi = "10.1109/IEDM.2010.5703385",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Chen, WB, Shie, BS, Chin, A, Hsu, KC & Chi, CC 2010, Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703385, Technical Digest - International Electron Devices Meeting, IEDM, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703385

Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing. / Chen, W. B.; Shie, B. S.; Chin, Albert et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. 5703385 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

AU - Chen, W. B.

AU - Shie, B. S.

AU - Chin, Albert

AU - Hsu, K. C.

AU - Chi, C. C.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (Rs), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm2/Vs high-field (1 MV/cm) mobility and low 37 mV ΔVt PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n+/p junction and 10X better I ON/IOFF.

AB - High performance metal-gate/high-κ/Ge n-MOSFETs are reached with low 73 Ω/sq sheet resistance (Rs), 1.10 ideality factor, 0.95 nm EOT, small 106 mV/dec sub-threshold slope (SS), good 285 cm2/Vs high-field (1 MV/cm) mobility and low 37 mV ΔVt PBTI (85°C, 1 hr). This is achieved by using 30-ns laser annealing that leads to 57% higher gate capacitance, better n+/p junction and 10X better I ON/IOFF.

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U2 - 10.1109/IEDM.2010.5703385

DO - 10.1109/IEDM.2010.5703385

M3 - Conference contribution

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SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

Higher κ metal-gate/high-κ/Ge n-MOSFETs with <1 nm EOT using laser annealing

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